Solution process for metal oxide thin film transistors under 350°C post-annealing

Woong Hee Jeong; Jung Hyeon Bae; Kyung Min Kim; Dong Lim Kim; You Seung Rim; Si Joon Kim; Hyun Jae Kim; Myung Kwan Ryu; Kyung Bae Park; Jong Baek Seon; Sang Yoon Lee

Solution process for metal oxide thin film transistors under 350°C post-annealing

Woong Hee Jeong, Jung Hyeon Bae, Kyung Min Kim, Dong Lim Kim, You Seung Rim, Si Joon Kim, Hyun Jae Kim, Myung Kwan Ryu, Kyung Bae Park, Jong Baek Seon, Sang Yoon Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

We have investigated solution process for metal oxide thin film transistors under post-annealing temperature of 350°C. Process engineering which includes materials, precursors, and gate insulators acts important roles under 350°C post-annealing process for large-area deposition.

Original language	English
Pages	799-800
Number of pages	2
Publication status	Published - 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 2010 Dec 1 → 2010 Dec 3

Other

Other	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	10/12/1 → 10/12/3

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction

Cite this

@conference{97a94a6000a942618d8983ffcd2e3c6c,

title = "Solution process for metal oxide thin film transistors under 350°C post-annealing",

abstract = "We have investigated solution process for metal oxide thin film transistors under post-annealing temperature of 350°C. Process engineering which includes materials, precursors, and gate insulators acts important roles under 350°C post-annealing process for large-area deposition.",

author = "Jeong, {Woong Hee} and Bae, {Jung Hyeon} and Kim, {Kyung Min} and Kim, {Dong Lim} and Rim, {You Seung} and Kim, {Si Joon} and Kim, {Hyun Jae} and Ryu, {Myung Kwan} and Park, {Kyung Bae} and Seon, {Jong Baek} and Lee, {Sang Yoon}",

year = "2010",

language = "English",

pages = "799--800",

note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

}

TY - CONF

T1 - Solution process for metal oxide thin film transistors under 350°C post-annealing

AU - Jeong, Woong Hee

AU - Bae, Jung Hyeon

AU - Kim, Kyung Min

AU - Kim, Dong Lim

AU - Rim, You Seung

AU - Kim, Si Joon

AU - Kim, Hyun Jae

AU - Ryu, Myung Kwan

AU - Park, Kyung Bae

AU - Seon, Jong Baek

AU - Lee, Sang Yoon

PY - 2010

Y1 - 2010

N2 - We have investigated solution process for metal oxide thin film transistors under post-annealing temperature of 350°C. Process engineering which includes materials, precursors, and gate insulators acts important roles under 350°C post-annealing process for large-area deposition.

AB - We have investigated solution process for metal oxide thin film transistors under post-annealing temperature of 350°C. Process engineering which includes materials, precursors, and gate insulators acts important roles under 350°C post-annealing process for large-area deposition.

UR - http://www.scopus.com/inward/record.url?scp=79956322964&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956322964&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956322964

SP - 799

EP - 800

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

Solution process for metal oxide thin film transistors under 350°C post-annealing

Abstract

Other

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this