Solution-Derived Zn-Doped GaO Films as Alignment Layers for Twisted-Nematic Liquid Crystal Displays Using Ion-Beam Bombardment

Yun Gun Lee; Gi Seok Heo; Hong Gyu Park; Hae Chang Jeong; Ju Hwan Lee; Dae Shik Seo

doi:10.1109/LED.2015.2445312

Solution-Derived Zn-Doped GaO Films as Alignment Layers for Twisted-Nematic Liquid Crystal Displays Using Ion-Beam Bombardment

Yun Gun Lee, Gi Seok Heo, Hong Gyu Park, Hae Chang Jeong, Ju Hwan Lee, Dae Shik Seo

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This letter demonstrates liquid crystal (LC) alignment on solution-derived Zn-doped GaO (ZnGaO) films using an ion beam (IB) method. Homogeneous and uniform LC alignment was achieved on IB-irradiated ZnGaO films. X-ray photoelectron spectroscopy was used to analyze the chemical bonding states of the IB-irradiated ZnGaO surfaces to verify the compositional behavior for LC alignment. In addition, ZnGaO films with twisted nematic cells exhibited electro-optical characteristics comparable with those of a conventional polyimide layer for potential LC display applications.

Original language	English
Article number	7122885
Pages (from-to)	817-819
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	8
DOIs	https://doi.org/10.1109/LED.2015.2445312
Publication status	Published - 2015 Aug 1

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2015.2445312

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title = "Solution-Derived Zn-Doped GaO Films as Alignment Layers for Twisted-Nematic Liquid Crystal Displays Using Ion-Beam Bombardment",

abstract = "This letter demonstrates liquid crystal (LC) alignment on solution-derived Zn-doped GaO (ZnGaO) films using an ion beam (IB) method. Homogeneous and uniform LC alignment was achieved on IB-irradiated ZnGaO films. X-ray photoelectron spectroscopy was used to analyze the chemical bonding states of the IB-irradiated ZnGaO surfaces to verify the compositional behavior for LC alignment. In addition, ZnGaO films with twisted nematic cells exhibited electro-optical characteristics comparable with those of a conventional polyimide layer for potential LC display applications.",

author = "Lee, {Yun Gun} and Heo, {Gi Seok} and Park, {Hong Gyu} and Jeong, {Hae Chang} and Lee, {Ju Hwan} and Seo, {Dae Shik}",

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doi = "10.1109/LED.2015.2445312",

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AU - Lee, Yun Gun

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AU - Park, Hong Gyu

AU - Jeong, Hae Chang

AU - Lee, Ju Hwan

AU - Seo, Dae Shik

PY - 2015/8/1

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N2 - This letter demonstrates liquid crystal (LC) alignment on solution-derived Zn-doped GaO (ZnGaO) films using an ion beam (IB) method. Homogeneous and uniform LC alignment was achieved on IB-irradiated ZnGaO films. X-ray photoelectron spectroscopy was used to analyze the chemical bonding states of the IB-irradiated ZnGaO surfaces to verify the compositional behavior for LC alignment. In addition, ZnGaO films with twisted nematic cells exhibited electro-optical characteristics comparable with those of a conventional polyimide layer for potential LC display applications.

AB - This letter demonstrates liquid crystal (LC) alignment on solution-derived Zn-doped GaO (ZnGaO) films using an ion beam (IB) method. Homogeneous and uniform LC alignment was achieved on IB-irradiated ZnGaO films. X-ray photoelectron spectroscopy was used to analyze the chemical bonding states of the IB-irradiated ZnGaO surfaces to verify the compositional behavior for LC alignment. In addition, ZnGaO films with twisted nematic cells exhibited electro-optical characteristics comparable with those of a conventional polyimide layer for potential LC display applications.

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Solution-Derived Zn-Doped GaO Films as Alignment Layers for Twisted-Nematic Liquid Crystal Displays Using Ion-Beam Bombardment

Abstract

Bibliographical note

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