Solution-deposited GdCeO x thin films: Microstructure, band structure, and dielectric property

Myung Soo Lee, Sang Han Park, Mann Ho Cho, Hyoungsub Kim

Research output: Contribution to journalArticlepeer-review


The microstructural and electrical properties of solution-deposited GdCeO x dielectric thin films with different mixing ratios were studied. The Ce incorporation enhanced the degree of crystallization and the refractive index of the Gd 2O 3 film, reduced the hysteresis and increased the dielectric constant. According to reflective electron energy loss spectroscopy and X-ray photoelectron spectroscopy analyses, the bandgap of the GdCeO x film gradually decreased with increasing Ce/(Gd + Ce) atomic ratio, which was primarily affected by the reduction of the valence band offset.

Original languageEnglish
Pages (from-to)1423-1427
Number of pages5
JournalMaterials Research Bulletin
Issue number6
Publication statusPublished - 2012 Jun

Bibliographical note

Funding Information:
This work was supported by National Research Foundation of Korea Grant funded by the Korean Government ( 2011-0003814 ).

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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