Solution-deposited GdCeO x thin films: Microstructure, band structure, and dielectric property

Myung Soo Lee; Sang Han Park; Mann Ho Cho; Hyoungsub Kim

doi:10.1016/j.materresbull.2012.02.048

Solution-deposited GdCeO _x thin films: Microstructure, band structure, and dielectric property

Myung Soo Lee, Sang Han Park, Mann Ho Cho, Hyoungsub Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The microstructural and electrical properties of solution-deposited GdCeO _x dielectric thin films with different mixing ratios were studied. The Ce incorporation enhanced the degree of crystallization and the refractive index of the Gd ₂O ₃ film, reduced the hysteresis and increased the dielectric constant. According to reflective electron energy loss spectroscopy and X-ray photoelectron spectroscopy analyses, the bandgap of the GdCeO _x film gradually decreased with increasing Ce/(Gd + Ce) atomic ratio, which was primarily affected by the reduction of the valence band offset.

Original language	English
Pages (from-to)	1423-1427
Number of pages	5
Journal	Materials Research Bulletin
Volume	47
Issue number	6
DOIs	https://doi.org/10.1016/j.materresbull.2012.02.048
Publication status	Published - 2012 Jun

Bibliographical note

Funding Information:
This work was supported by National Research Foundation of Korea Grant funded by the Korean Government ( 2011-0003814 ).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.materresbull.2012.02.048

Cite this

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title = "Solution-deposited GdCeO x thin films: Microstructure, band structure, and dielectric property",

abstract = "The microstructural and electrical properties of solution-deposited GdCeO x dielectric thin films with different mixing ratios were studied. The Ce incorporation enhanced the degree of crystallization and the refractive index of the Gd 2O 3 film, reduced the hysteresis and increased the dielectric constant. According to reflective electron energy loss spectroscopy and X-ray photoelectron spectroscopy analyses, the bandgap of the GdCeO x film gradually decreased with increasing Ce/(Gd + Ce) atomic ratio, which was primarily affected by the reduction of the valence band offset.",

author = "Lee, {Myung Soo} and Park, {Sang Han} and Cho, {Mann Ho} and Hyoungsub Kim",

note = "Funding Information: This work was supported by National Research Foundation of Korea Grant funded by the Korean Government ( 2011-0003814 ).",

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AB - The microstructural and electrical properties of solution-deposited GdCeO x dielectric thin films with different mixing ratios were studied. The Ce incorporation enhanced the degree of crystallization and the refractive index of the Gd 2O 3 film, reduced the hysteresis and increased the dielectric constant. According to reflective electron energy loss spectroscopy and X-ray photoelectron spectroscopy analyses, the bandgap of the GdCeO x film gradually decreased with increasing Ce/(Gd + Ce) atomic ratio, which was primarily affected by the reduction of the valence band offset.

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