Abstract
A polycyclosilane precursor was synthesized to develop soluble silicon materials and silicon thin films with optical properties at 193 nm, high silicon content, and etch selectivity for O2 and CFx plasmas. A new class of polycyclosilane-polysiloxane hybrid materials and their thin films exhibited good etch selectivity and good optical properties at 193 nm without organic absorbents.
Original language | English |
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Pages (from-to) | 239-242 |
Number of pages | 4 |
Journal | Journal of Materials Chemistry C |
Volume | 3 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2015 Jan 14 |
Bibliographical note
Publisher Copyright:© 2015 The Royal Society of Chemistry.
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Chemistry