A polycyclosilane precursor was synthesized to develop soluble silicon materials and silicon thin films with optical properties at 193 nm, high silicon content, and etch selectivity for O2 and CFx plasmas. A new class of polycyclosilane-polysiloxane hybrid materials and their thin films exhibited good etch selectivity and good optical properties at 193 nm without organic absorbents.
Bibliographical notePublisher Copyright:
© 2015 The Royal Society of Chemistry.
All Science Journal Classification (ASJC) codes
- Materials Chemistry