Abstract
Solid-phase crystallization (SPC) behavior of a-Si film [a-Si(II)] in which oxygen concentration (Co) is higher at the a-Si/SiO2 interface (Co=5×1021 /cm3) than at the film surface (C0=3×1020 /cm3) has been investigated. The results were also compared with that of a-Si single layer [a-Si(I), 600 Å] with C0=3×1020 /cm3. It has been found that the interface-nucleation was suppressed in the a-Si(II) and the surface-nucleation occurred to make a poly-Si/a-Si (300 Å/300 Å) bilayer structure. Many equiaxial grains with sizes of 1∼2 μm were formed in the surface-nucleated poly-Si layer. Compared with the results of conventional SPC poly-Si (600 Å-thick) in which elliptical grains with sizes of 0.5∼1 μm were formed by the interface (a-Si/SiO2)-nucleation, we concluded that the poly-Si/a-Si bilayer scheme is a method to improve the microstructure of SPC poly-Si film.
| Original language | English |
|---|---|
| Pages (from-to) | Q631-Q636 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 621 |
| DOIs | |
| Publication status | Published - 2000 |
| Event | Electron-Emissive Materials, Vacuum Microelectronics and Flat-Panel Displays - San Francisco, CA, United States Duration: 2000 Apr 25 → 2000 Apr 27 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering