Size-dependent field-emission properties from triangular-shaped GaN nanostructures

Duc V. Dinh, J. H. Yang, S. M. Kang, S. W. Kim, D. H. Yoon

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7 Citations (Scopus)


Gallium nitride (GaN) nanostructures were synthesized on Si substrates by using the vapor-phase epitaxy (VPE) method. The as-synthesized GaN nanostructures with a hexagonal, single-crystalline structure possessed a triangular cross-section with nanorod and nanowire diameters ranging from about 100 to 280 nm and from about 20 to 60 nm, respectively. The field-emission (FE) properties of the GaN nanostructures were investigated in terms of their size dependence. Turn-on fields of about 4.85 V/μm and 4.10 V/μm, respectively, for the GaN nanorods and nanowires were obtained, corresponding to field-enhancement factors of about 373 and 1427. The higher aspect ratio of the GaN nanowires compared to that of the GaN nanorods caused the differences in FE properties.

Original languageEnglish
Pages (from-to)202-206
Number of pages5
JournalJournal of the Korean Physical Society
Issue number1
Publication statusPublished - 2009 Jul

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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