SiO₂ aerogel film as a novel intermetal dielectric

A low dielectric constant material for an intermetal dielectric (IMD) is imperative to reduce power dissipation, cross talk, and interconnection delay in the deep submicron device regime. SiO₂ aerogel is one of the possible candidate with an inherent low dielectric constant. This article reports on the results of the successful fabrication of a SiO₂ aerogel film as well as its material properties and electrical properties. Fundamental physical, chemical, and electrical material properties were evaluated for a SiO₂ aerogel film before and after thermal treatment. An inherent low dielectric constant of 2.0 was realized for about 70% porosity of the SiO₂ aerogel film and the leakage current density held at a level of 10^-7 A/cm². Preliminary results of the SiO₂ aerogel film investigated in our study represent a very positive prospective to IMD applications.