Abstract
In many electronic devices, the electrode pattern consists of two different metal layers that improve the electrical and/or mechanical contact. We here report that double-layered metal thin film patterns can be fabricated at the micrometer scale by direct photoetching with a spatially-modulated neodymium-doped yttrium aluminum garnet pulsed laser beam. A zinc-tin oxide thin film transistor was fabricated using photoetched Ag/Al electrodes. An on/off ratio higher than 105 and an off-current less than 10-10 A were obtained, indicating that the channel area between electrodes was completely etched out. This article discusses the applicability and limitation of the direct photoetching process for double-layered metal films, along with the dependence of pattern fidelity on the film thickness.
| Original language | English |
|---|---|
| Pages (from-to) | S179-S182 |
| Journal | Current Applied Physics |
| Volume | 11 |
| Issue number | 4 SUPPL. |
| DOIs | |
| Publication status | Published - 2011 Jul |
Bibliographical note
Funding Information:This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education , Science and Technology (grant number: 2009-0081142 ) and by Seoul R&BD Program ( ST090854 ).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)