Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation: Optical studies

Ravi Kumar; Fouran Singh; Basavaraj Angadi; Ji Won Choi; Won Kook Choi; Kwangho Jeong; Jong Han Song; M. Wasi Khan; J. P. Srivastava; Ajay Kumar; R. P. Tandon

doi:10.1063/1.2399893

Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation: Optical studies

Ravi Kumar, Fouran Singh, Basavaraj Angadi, Ji Won Choi, Won Kook Choi, Kwangho Jeong, Jong Han Song, M. Wasi Khan, J. P. Srivastava, Ajay Kumar, R. P. Tandon

Department of Physics

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

Low temperature photoluminescence and optical absorption studies on 200 MeV Ag+15 ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200 MeV Ag+15 ion irradiation with a fluence of 1× 1012 ions cm2. The photoluminescence spectrum of pure ZnO thin film was characterized by the I4 peak due to the neutral donor bound excitons and the broad green emission. The Co-doped ZnO films show three sharp levels and two shoulders corresponding to 3 t2g and 2 eg levels of crystal field splitted Co d orbitals, respectively. The ultraviolet-visible absorption spectroscopy also shows the systematic variation of band gap after 200 MeV Ag+15 ion irradiation.

Original language	English
Article number	113708
Journal	Journal of Applied Physics
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.2399893
Publication status	Published - 2006

Bibliographical note

Funding Information:
One of the authors (R.K.) is very thankful to Dr. Amit Roy, Director, IUAC, New Delhi for his interest and support for this work. The authors are thankful to the IUAC, Pelletron group for providing ion beam. This work is financially supported by KIST future resource program (2E19410), KOSEF under Contract No. R01-2004-000-10715-0, and MOST under Contract No. RMO-2006-000-01001-0(2006).

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Physics and Astronomy(all)

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10.1063/1.2399893

Cite this

@article{82fd17b1dbd342d1bc39472a481617ea,

title = "Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation: Optical studies",

abstract = "Low temperature photoluminescence and optical absorption studies on 200 MeV Ag+15 ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200 MeV Ag+15 ion irradiation with a fluence of 1× 1012 ions cm2. The photoluminescence spectrum of pure ZnO thin film was characterized by the I4 peak due to the neutral donor bound excitons and the broad green emission. The Co-doped ZnO films show three sharp levels and two shoulders corresponding to 3 t2g and 2 eg levels of crystal field splitted Co d orbitals, respectively. The ultraviolet-visible absorption spectroscopy also shows the systematic variation of band gap after 200 MeV Ag+15 ion irradiation.",

author = "Ravi Kumar and Fouran Singh and Basavaraj Angadi and Choi, {Ji Won} and Choi, {Won Kook} and Kwangho Jeong and Song, {Jong Han} and Khan, {M. Wasi} and Srivastava, {J. P.} and Ajay Kumar and Tandon, {R. P.}",

note = "Funding Information: One of the authors (R.K.) is very thankful to Dr. Amit Roy, Director, IUAC, New Delhi for his interest and support for this work. The authors are thankful to the IUAC, Pelletron group for providing ion beam. This work is financially supported by KIST future resource program (2E19410), KOSEF under Contract No. R01-2004-000-10715-0, and MOST under Contract No. RMO-2006-000-01001-0(2006).",

year = "2006",

doi = "10.1063/1.2399893",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "11",

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TY - JOUR

T1 - Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation

T2 - Optical studies

AU - Kumar, Ravi

AU - Singh, Fouran

AU - Angadi, Basavaraj

AU - Choi, Ji Won

AU - Choi, Won Kook

AU - Jeong, Kwangho

AU - Song, Jong Han

AU - Khan, M. Wasi

AU - Srivastava, J. P.

AU - Kumar, Ajay

AU - Tandon, R. P.

N1 - Funding Information: One of the authors (R.K.) is very thankful to Dr. Amit Roy, Director, IUAC, New Delhi for his interest and support for this work. The authors are thankful to the IUAC, Pelletron group for providing ion beam. This work is financially supported by KIST future resource program (2E19410), KOSEF under Contract No. R01-2004-000-10715-0, and MOST under Contract No. RMO-2006-000-01001-0(2006).

PY - 2006

Y1 - 2006

N2 - Low temperature photoluminescence and optical absorption studies on 200 MeV Ag+15 ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200 MeV Ag+15 ion irradiation with a fluence of 1× 1012 ions cm2. The photoluminescence spectrum of pure ZnO thin film was characterized by the I4 peak due to the neutral donor bound excitons and the broad green emission. The Co-doped ZnO films show three sharp levels and two shoulders corresponding to 3 t2g and 2 eg levels of crystal field splitted Co d orbitals, respectively. The ultraviolet-visible absorption spectroscopy also shows the systematic variation of band gap after 200 MeV Ag+15 ion irradiation.

AB - Low temperature photoluminescence and optical absorption studies on 200 MeV Ag+15 ion irradiated Co-implanted ZnO thin films were studied. The Co clusters present in as implanted samples were observed to be dissolved using 200 MeV Ag+15 ion irradiation with a fluence of 1× 1012 ions cm2. The photoluminescence spectrum of pure ZnO thin film was characterized by the I4 peak due to the neutral donor bound excitons and the broad green emission. The Co-doped ZnO films show three sharp levels and two shoulders corresponding to 3 t2g and 2 eg levels of crystal field splitted Co d orbitals, respectively. The ultraviolet-visible absorption spectroscopy also shows the systematic variation of band gap after 200 MeV Ag+15 ion irradiation.

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VL - 100

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IS - 11

M1 - 113708

ER -

Single phase formation of Co-implanted ZnO thin films by swift heavy ion irradiation: Optical studies

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Bibliographical note

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