Single metal gate with dual work functions for FD-SOI and UTB double gate technologies

Daniel Pham; Hongfa Luan; Kaveri Mathur; Barry Sassman; Billy Nguyen; George Brown; Ji Woon Yang; Jungwoo Oh; Peter Zeitzoff; Larry Larson

doi:10.1109/SOI.2006.284414

Single metal gate with dual work functions for FD-SOI and UTB double gate technologies

Daniel Pham, Hongfa Luan, Kaveri Mathur, Barry Sassman, Billy Nguyen, George Brown, Ji Woon Yang, Jungwoo Oh, Peter Zeitzoff, Larry Larson

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In this paper, we demonstrate an integratable single metal gate (TiSiN) on HfSi_xO_y, with dual work functions (4.44eV and 4.83eV), achieved by varying the metal thickness. These structures may be used for FD-SOI and double gate ultra-thin body devices. Close to symmetric Vt is achieved: 0.32V and -0.37V for long channel FD-SOI nMOS and pMOS devices, respectively. The device shows good sub-threshold slope values, as low as 62mV/dec and 75mV/dec for 1μm and 0.2μm devices, respectively.

Original language	English
Title of host publication	2006 IEEE international SOI Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	25-26
Number of pages	2
ISBN (Print)	1424402905, 9781424402908
DOIs	https://doi.org/10.1109/SOI.2006.284414
Publication status	Published - 2006 Jan 1
Event	2006 IEEE International Silicon on Insulator Conference, SOI - Niagara Falls, NY, United States Duration: 2006 Oct 2 → 2006 Oct 5

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Other

Other	2006 IEEE International Silicon on Insulator Conference, SOI
Country/Territory	United States
City	Niagara Falls, NY
Period	06/10/2 → 06/10/5

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/SOI.2006.284414

Cite this

Pham, D., Luan, H., Mathur, K., Sassman, B., Nguyen, B., Brown, G., Yang, J. W., Oh, J., Zeitzoff, P., & Larson, L. (2006). Single metal gate with dual work functions for FD-SOI and UTB double gate technologies. In 2006 IEEE international SOI Conference Proceedings (pp. 25-26). Article 4062862 (Proceedings - IEEE International SOI Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOI.2006.284414

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title = "Single metal gate with dual work functions for FD-SOI and UTB double gate technologies",

abstract = "In this paper, we demonstrate an integratable single metal gate (TiSiN) on HfSixOy, with dual work functions (4.44eV and 4.83eV), achieved by varying the metal thickness. These structures may be used for FD-SOI and double gate ultra-thin body devices. Close to symmetric Vt is achieved: 0.32V and -0.37V for long channel FD-SOI nMOS and pMOS devices, respectively. The device shows good sub-threshold slope values, as low as 62mV/dec and 75mV/dec for 1μm and 0.2μm devices, respectively.",

author = "Daniel Pham and Hongfa Luan and Kaveri Mathur and Barry Sassman and Billy Nguyen and George Brown and Yang, {Ji Woon} and Jungwoo Oh and Peter Zeitzoff and Larry Larson",

year = "2006",

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doi = "10.1109/SOI.2006.284414",

language = "English",

isbn = "1424402905",

series = "Proceedings - IEEE International SOI Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2006 IEEE international SOI Conference Proceedings",

address = "United States",

note = "2006 IEEE International Silicon on Insulator Conference, SOI ; Conference date: 02-10-2006 Through 05-10-2006",

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Pham, D, Luan, H, Mathur, K, Sassman, B, Nguyen, B, Brown, G, Yang, JW, Oh, J, Zeitzoff, P & Larson, L 2006, Single metal gate with dual work functions for FD-SOI and UTB double gate technologies. in 2006 IEEE international SOI Conference Proceedings., 4062862, Proceedings - IEEE International SOI Conference, Institute of Electrical and Electronics Engineers Inc., pp. 25-26, 2006 IEEE International Silicon on Insulator Conference, SOI, Niagara Falls, NY, United States, 06/10/2. https://doi.org/10.1109/SOI.2006.284414

Single metal gate with dual work functions for FD-SOI and UTB double gate technologies. / Pham, Daniel; Luan, Hongfa; Mathur, Kaveri et al.
2006 IEEE international SOI Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2006. p. 25-26 4062862 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Single metal gate with dual work functions for FD-SOI and UTB double gate technologies

AU - Pham, Daniel

AU - Luan, Hongfa

AU - Mathur, Kaveri

AU - Sassman, Barry

AU - Nguyen, Billy

AU - Brown, George

AU - Yang, Ji Woon

AU - Oh, Jungwoo

AU - Zeitzoff, Peter

AU - Larson, Larry

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N2 - In this paper, we demonstrate an integratable single metal gate (TiSiN) on HfSixOy, with dual work functions (4.44eV and 4.83eV), achieved by varying the metal thickness. These structures may be used for FD-SOI and double gate ultra-thin body devices. Close to symmetric Vt is achieved: 0.32V and -0.37V for long channel FD-SOI nMOS and pMOS devices, respectively. The device shows good sub-threshold slope values, as low as 62mV/dec and 75mV/dec for 1μm and 0.2μm devices, respectively.

AB - In this paper, we demonstrate an integratable single metal gate (TiSiN) on HfSixOy, with dual work functions (4.44eV and 4.83eV), achieved by varying the metal thickness. These structures may be used for FD-SOI and double gate ultra-thin body devices. Close to symmetric Vt is achieved: 0.32V and -0.37V for long channel FD-SOI nMOS and pMOS devices, respectively. The device shows good sub-threshold slope values, as low as 62mV/dec and 75mV/dec for 1μm and 0.2μm devices, respectively.

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BT - 2006 IEEE international SOI Conference Proceedings

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Single metal gate with dual work functions for FD-SOI and UTB double gate technologies

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