Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation with Enhanced Read Performance in 22-nm FinFET Technology

Younghwi Yang; Juhyun Park; Seung Chul Song; Joseph Wang; Geoffrey Yeap; Seong Ook Jung

doi:10.1109/TVLSI.2014.2367234

Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation with Enhanced Read Performance in 22-nm FinFET Technology

Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong Ook Jung

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Although near-threshold (V_th) operation is an attractive method for energy and performance-constrained applications, it suffers from problems in terms of circuit stability, particularly, for static random access memory (SRAM) cells. This brief proposes a near-V_th 9T SRAM cell implemented in a 22-nm FinFET technology. The read buffer of the proposed cell ensures read stability by decoupling the stored node from the read bit-line and improves read performance using a one-transistor read path. Energy and standby power are reduced by eliminating the sub-V_th leakage current in the read buffer. For accurate sensing yield estimation, a new yield-estimation method is also proposed, which considers the dynamic trip voltage. The proposed SRAM cell can achieve a minimum operating voltage of 0.3 V.

Original language	English
Article number	6963407
Pages (from-to)	2748-2752
Number of pages	5
Journal	IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume	23
Issue number	11
DOIs	https://doi.org/10.1109/TVLSI.2014.2367234
Publication status	Published - 2015 Nov

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

All Science Journal Classification (ASJC) codes

Software
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/TVLSI.2014.2367234

Cite this

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abstract = "Although near-threshold (Vth) operation is an attractive method for energy and performance-constrained applications, it suffers from problems in terms of circuit stability, particularly, for static random access memory (SRAM) cells. This brief proposes a near-Vth 9T SRAM cell implemented in a 22-nm FinFET technology. The read buffer of the proposed cell ensures read stability by decoupling the stored node from the read bit-line and improves read performance using a one-transistor read path. Energy and standby power are reduced by eliminating the sub-Vth leakage current in the read buffer. For accurate sensing yield estimation, a new yield-estimation method is also proposed, which considers the dynamic trip voltage. The proposed SRAM cell can achieve a minimum operating voltage of 0.3 V.",

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AU - Wang, Joseph

AU - Yeap, Geoffrey

AU - Jung, Seong Ook

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AB - Although near-threshold (Vth) operation is an attractive method for energy and performance-constrained applications, it suffers from problems in terms of circuit stability, particularly, for static random access memory (SRAM) cells. This brief proposes a near-Vth 9T SRAM cell implemented in a 22-nm FinFET technology. The read buffer of the proposed cell ensures read stability by decoupling the stored node from the read bit-line and improves read performance using a one-transistor read path. Energy and standby power are reduced by eliminating the sub-Vth leakage current in the read buffer. For accurate sensing yield estimation, a new yield-estimation method is also proposed, which considers the dynamic trip voltage. The proposed SRAM cell can achieve a minimum operating voltage of 0.3 V.

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Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation with Enhanced Read Performance in 22-nm FinFET Technology

Abstract

Bibliographical note

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