Simultaneous Imaging and Energy Harvesting in CMOS Image Sensor Pixels

Sung Yun Park, Kyuseok Lee, Hyunsoo Song, Euisik Yoon

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We present a prototype CMOS active pixel that is capable of simultaneous imaging and energy harvesting without introducing additional in-plane p-n junctions. The prototype pixel uses a vertical junction that is available in standard CMOS processes. Unlike the conventional CMOS electron-based imaging pixels, where the region is used as a sensing node for image capture, we adopted a hole-based imaging technique, while exploiting the ${n}-{\text {well}}$ region for energy harvesting at a high fill-factor of >94%. To verify the feasibility, CMOS image sensors are fabricated and characterized. We successfully demonstrated that the energy harvesting can be achieved with a power density of 998 pW/klux/mm2, while capturing images at 74.67 pJ/pixel. The fabricated prototype device has achieved the highest power density among the recent state-of-the-art works and can self-sustain its image capturing operation at 15 fps without external power sources above ~60 klux of illumination.

Original languageEnglish
Pages (from-to)532-535
Number of pages4
JournalIEEE Electron Device Letters
Issue number4
Publication statusPublished - 2018 Apr

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Simultaneous Imaging and Energy Harvesting in CMOS Image Sensor Pixels'. Together they form a unique fingerprint.

Cite this