Abstract
Here, we proposed a novel and simple strategy for fabricating solution-processed In-Ga-Zn-O thin-film transistors (TFTs) at low annealing temperature via vertical diffusion technique. This technique enables a significant reduction of processing temperatures (< 300°C) with maintaining its electrical performances and is useful in the fabrication of flexible/transparent oxide TFTs.
| Original language | English |
|---|---|
| Pages (from-to) | 1221-1223 |
| Number of pages | 3 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 46 |
| Issue number | Book 3 |
| DOIs | |
| Publication status | Published - 2015 Jun 1 |
| Event | 2015 SID International Symposium - San Jose, United States Duration: 2015 Jun 4 → … |
Bibliographical note
Funding Information:This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011-0028819).
Publisher Copyright:
© 2015 SID.
All Science Journal Classification (ASJC) codes
- Engineering(all)