Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process

Jae Won Na; You Seung Rim; Hee Jun Kim; Jin Hyeok Lee; Seonghwan Hong; Hyun Jae Kim

doi:10.1021/acsami.7b06643

Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process

Jae Won Na, You Seung Rim, Hee Jun Kim, Jin Hyeok Lee, Seonghwan Hong, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO₂) dielectric layer are in contact and thermally processed, a Si⁴⁺ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm² V^-1 s^-1 and a on/off current ratio over 10⁷ is successfully demonstrated.

Original language	English
Pages (from-to)	29849-29856
Number of pages	8
Journal	ACS Applied Materials and Interfaces
Volume	9
Issue number	35
DOIs	https://doi.org/10.1021/acsami.7b06643
Publication status	Published - 2017 Sept 6

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIT) (No. 2017R1A2B3008719)

Publisher Copyright:
© 2017 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1021/acsami.7b06643

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title = "Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process",

abstract = "Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO2) dielectric layer are in contact and thermally processed, a Si4+ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm2 V-1 s-1 and a on/off current ratio over 107 is successfully demonstrated.",

author = "Na, {Jae Won} and Rim, {You Seung} and Kim, {Hee Jun} and Lee, {Jin Hyeok} and Seonghwan Hong and Kim, {Hyun Jae}",

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AU - Na, Jae Won

AU - Rim, You Seung

AU - Kim, Hee Jun

AU - Lee, Jin Hyeok

AU - Hong, Seonghwan

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIT) (No. 2017R1A2B3008719) Publisher Copyright: © 2017 American Chemical Society.

PY - 2017/9/6

Y1 - 2017/9/6

N2 - Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO2) dielectric layer are in contact and thermally processed, a Si4+ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm2 V-1 s-1 and a on/off current ratio over 107 is successfully demonstrated.

AB - Solution-processed amorphous metal-oxide thin-film transistors (TFTs) utilizing an intermixed interface between a metal-oxide semiconductor and a dielectric layer are proposed. In-depth physical characterizations are carried out to verify the existence of the intermixed interface that is inevitably formed by interdiffusion of cations originated from a thermal process. In particular, when indium zinc oxide (IZO) semiconductor and silicon dioxide (SiO2) dielectric layer are in contact and thermally processed, a Si4+ intermixed IZO (Si/IZO) interface is created. On the basis of this concept, a high-performance Si/IZO TFT having both a field-effect mobility exceeding 10 cm2 V-1 s-1 and a on/off current ratio over 107 is successfully demonstrated.

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Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process

Abstract

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