Silicon-based single electron transistor fabricated by direct electron beam irradiation

We have developed a new technique using direct electron beam irradiation for the fabrication of silicon-based single electron transistors based on the traditional metal-oxide-semiconductor-field-effect structures. Using this technique, more than 10 devices have been fabricated and clear Coulomb oscillations are observed in most of samples. The period of Coulomb oscillations depends on the size of dot that is formed between two potential barriers induced by direct electron beam irradiation.