SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma

Seran Park; Kyu Dong Kim; Hoon Jung Oh; Dae Hong Ko

doi:10.1109/EDTM.2019.8731213

SiGe surface morphogenesis during dry cleaning with NF₃/H₂O plasma

Seran Park, Kyu Dong Kim, Hoon Jung Oh, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Herein, we investigated the effects of processing conditions on the surface morphology of SiGe subjected to dry cleaning with NF₃/H₂O plasma, characterizing dry-cleaned samples by several instrumental techniques and revealing the generation of 80-250-nm-wide bumps on the SiGe surface. The formation of these bumps resulted in increased surface roughness and was found to be correlated with the H₂O flow rate. Based on the above observations, an additional guideline for evaluating the SiGe cleaning process was proposed.

Original language	English
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	348-350
Number of pages	3
ISBN (Electronic)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731213
Publication status	Published - 2019 Mar 1
Event	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore Duration: 2019 Mar 12 → 2019 Mar 15

Publication series

Name	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Country/Territory	Singapore
City	Singapore
Period	19/3/12 → 19/3/15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Hardware and Architecture

Access to Document

10.1109/EDTM.2019.8731213

Cite this

Park, S., Kim, K. D., Oh, H. J., & Ko, D. H. (2019). SiGe surface morphogenesis during dry cleaning with NF₃/H₂O plasma. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 348-350). Article 8731213 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731213

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title = "SiGe surface morphogenesis during dry cleaning with NF3/H2O plasma",

abstract = "Herein, we investigated the effects of processing conditions on the surface morphology of SiGe subjected to dry cleaning with NF3/H2O plasma, characterizing dry-cleaned samples by several instrumental techniques and revealing the generation of 80-250-nm-wide bumps on the SiGe surface. The formation of these bumps resulted in increased surface roughness and was found to be correlated with the H2O flow rate. Based on the above observations, an additional guideline for evaluating the SiGe cleaning process was proposed.",

author = "Seran Park and Kim, {Kyu Dong} and Oh, {Hoon Jung} and Ko, {Dae Hong}",

year = "2019",

month = mar,

day = "1",

doi = "10.1109/EDTM.2019.8731213",

language = "English",

series = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "348--350",

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note = "2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 ; Conference date: 12-03-2019 Through 15-03-2019",

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Park, S, Kim, KD, Oh, HJ & Ko, DH 2019, SiGe surface morphogenesis during dry cleaning with NF₃/H₂O plasma. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731213, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 348-350, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 19/3/12. https://doi.org/10.1109/EDTM.2019.8731213

SiGe surface morphogenesis during dry cleaning with NF₃/H₂O plasma. / Park, Seran; Kim, Kyu Dong; Oh, Hoon Jung et al.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 348-350 8731213 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - Herein, we investigated the effects of processing conditions on the surface morphology of SiGe subjected to dry cleaning with NF3/H2O plasma, characterizing dry-cleaned samples by several instrumental techniques and revealing the generation of 80-250-nm-wide bumps on the SiGe surface. The formation of these bumps resulted in increased surface roughness and was found to be correlated with the H2O flow rate. Based on the above observations, an additional guideline for evaluating the SiGe cleaning process was proposed.

AB - Herein, we investigated the effects of processing conditions on the surface morphology of SiGe subjected to dry cleaning with NF3/H2O plasma, characterizing dry-cleaned samples by several instrumental techniques and revealing the generation of 80-250-nm-wide bumps on the SiGe surface. The formation of these bumps resulted in increased surface roughness and was found to be correlated with the H2O flow rate. Based on the above observations, an additional guideline for evaluating the SiGe cleaning process was proposed.

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