SiGe nanostructure fabrication through selective epitaxial growth using self-assembled nanotemplates

Sang Joon Park; In Chan Hwang; Heung Soon Lee; Jong Yeog Son; Hyungjun Kim

doi:10.1088/1757-899X/6/1/012019

SiGe nanostructure fabrication through selective epitaxial growth using self-assembled nanotemplates

Sang Joon Park, In Chan Hwang, Heung Soon Lee, Jong Yeog Son, Hyungjun Kim

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ordered SiGe nanostructures including nanodots (NDs) and nanowires (NWs) were fabricated via selective epitaxial growth (SEG) of SiGe using ultrahigh vacuum chemical vapour deposition (UHV-CVD) on Si openings fabricated using self-assembled nanotemplates of anodic anluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-block-polymethylmethacrylate (PS-b-PMMA), exhibiting hexagonally arranged nanoholes. SiGe SEG was processed through repeating the unit cycle composed of two separated steps of SiGe growth using disilane (Si₂H₆) and Germane (GeH₄) and chlorine (Cl₂ exposure. Cl₂ was used to improve the selectivity of SiGe SEG between the Si openings and the oxide area. Ordered SiGe NDs and NWs were fabricated through SiGe SEG of 20 cycles and 400 cycles on AAO/Si, respectively. In addition, ordered SiGe NDs were obtained via SiGe SEG of 20 cycles on SiO₂ template, fabricated through pattern transfer of nanoholes of PS-b-PMMA to SiO₂/Si. SiGe nanostructure fabrication using both AAO and PS-b-PMMA showed good replication of the nanohole size of the nanotemplates.

Original language	English
Article number	012019
Journal	IOP Conference Series: Materials Science and Engineering
Volume	6
DOIs	https://doi.org/10.1088/1757-899X/6/1/012019
Publication status	Published - 2009
Event	European Materials Research Society (E-MRS) 2009 Spring Meeting - Strasbourg, France Duration: 2009 Jun 8 → 2009 Jun 12

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering

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10.1088/1757-899X/6/1/012019

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title = "SiGe nanostructure fabrication through selective epitaxial growth using self-assembled nanotemplates",

abstract = "Ordered SiGe nanostructures including nanodots (NDs) and nanowires (NWs) were fabricated via selective epitaxial growth (SEG) of SiGe using ultrahigh vacuum chemical vapour deposition (UHV-CVD) on Si openings fabricated using self-assembled nanotemplates of anodic anluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-block-polymethylmethacrylate (PS-b-PMMA), exhibiting hexagonally arranged nanoholes. SiGe SEG was processed through repeating the unit cycle composed of two separated steps of SiGe growth using disilane (Si2H6) and Germane (GeH4) and chlorine (Cl2 exposure. Cl2 was used to improve the selectivity of SiGe SEG between the Si openings and the oxide area. Ordered SiGe NDs and NWs were fabricated through SiGe SEG of 20 cycles and 400 cycles on AAO/Si, respectively. In addition, ordered SiGe NDs were obtained via SiGe SEG of 20 cycles on SiO2 template, fabricated through pattern transfer of nanoholes of PS-b-PMMA to SiO2/Si. SiGe nanostructure fabrication using both AAO and PS-b-PMMA showed good replication of the nanohole size of the nanotemplates.",

author = "Park, {Sang Joon} and Hwang, {In Chan} and Lee, {Heung Soon} and Son, {Jong Yeog} and Hyungjun Kim",

year = "2009",

doi = "10.1088/1757-899X/6/1/012019",

language = "English",

volume = "6",

journal = "IOP Conference Series: Materials Science and Engineering",

issn = "1757-8981",

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T1 - SiGe nanostructure fabrication through selective epitaxial growth using self-assembled nanotemplates

AU - Park, Sang Joon

AU - Hwang, In Chan

AU - Lee, Heung Soon

AU - Son, Jong Yeog

AU - Kim, Hyungjun

PY - 2009

Y1 - 2009

N2 - Ordered SiGe nanostructures including nanodots (NDs) and nanowires (NWs) were fabricated via selective epitaxial growth (SEG) of SiGe using ultrahigh vacuum chemical vapour deposition (UHV-CVD) on Si openings fabricated using self-assembled nanotemplates of anodic anluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-block-polymethylmethacrylate (PS-b-PMMA), exhibiting hexagonally arranged nanoholes. SiGe SEG was processed through repeating the unit cycle composed of two separated steps of SiGe growth using disilane (Si2H6) and Germane (GeH4) and chlorine (Cl2 exposure. Cl2 was used to improve the selectivity of SiGe SEG between the Si openings and the oxide area. Ordered SiGe NDs and NWs were fabricated through SiGe SEG of 20 cycles and 400 cycles on AAO/Si, respectively. In addition, ordered SiGe NDs were obtained via SiGe SEG of 20 cycles on SiO2 template, fabricated through pattern transfer of nanoholes of PS-b-PMMA to SiO2/Si. SiGe nanostructure fabrication using both AAO and PS-b-PMMA showed good replication of the nanohole size of the nanotemplates.

AB - Ordered SiGe nanostructures including nanodots (NDs) and nanowires (NWs) were fabricated via selective epitaxial growth (SEG) of SiGe using ultrahigh vacuum chemical vapour deposition (UHV-CVD) on Si openings fabricated using self-assembled nanotemplates of anodic anluminum oxide (AAO) and diblock copolymer (DBC) of polystyrene-block-polymethylmethacrylate (PS-b-PMMA), exhibiting hexagonally arranged nanoholes. SiGe SEG was processed through repeating the unit cycle composed of two separated steps of SiGe growth using disilane (Si2H6) and Germane (GeH4) and chlorine (Cl2 exposure. Cl2 was used to improve the selectivity of SiGe SEG between the Si openings and the oxide area. Ordered SiGe NDs and NWs were fabricated through SiGe SEG of 20 cycles and 400 cycles on AAO/Si, respectively. In addition, ordered SiGe NDs were obtained via SiGe SEG of 20 cycles on SiO2 template, fabricated through pattern transfer of nanoholes of PS-b-PMMA to SiO2/Si. SiGe nanostructure fabrication using both AAO and PS-b-PMMA showed good replication of the nanohole size of the nanotemplates.

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ER -

SiGe nanostructure fabrication through selective epitaxial growth using self-assembled nanotemplates

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