@inproceedings{930d4c9eb2274cc1a09ead0c77296757,
title = "SiGe CMOS on (110) channel orientation with mobility boosters: Surface orientation, channel directions, and uniaxial strain",
abstract = "We report a comprehensive study of surface orientation, channel direction, and uniaxial strain technologies for SiGe channels CMOS. On a (110) surface, SiGe nMOS demonstrates a higher electron mobility than Si (110) nMOS. The hole mobility of SiGe pMOS is greater on a (110) surface than on a (100) surface. Both electron and hole mobility on SiGe (110) surfaces are further enhanced in a <110> channel direction with appropriate uniaxial channel strain. Results obtained in this work advance the integration technique of high mobility CMOS on a single SiGe (110)<110> channel orientation to enhance overall performance without the process complexity associated with hybrid channel CMOS approaches.",
author = "J. Oh and Lee, {S. H.} and Min, {K. S.} and J. Huang and Min, {B. G.} and B. Sassman and K. Jeon and Loh, {W. Y.} and J. Barnett and I. Ok and Kang, {C. Y.} and C. Smith and Ko, {D. H.} and Kirsch, {P. D.} and R. Jammy",
year = "2010",
doi = "10.1109/VLSIT.2010.5556127",
language = "English",
isbn = "9781424476374",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
pages = "39--40",
booktitle = "2010 Symposium on VLSI Technology, VLSIT 2010",
note = "2010 Symposium on VLSI Technology, VLSIT 2010 ; Conference date: 15-06-2010 Through 17-06-2010",
}