Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit

Yoshito Okuno; Sanpon Vantasin; In Sang Yang; Jangyup Son; Jongill Hong; Yoshito Yannick Tanaka; Yasushi Nakata; Yukihiro Ozaki; Nobuyuki Naka

doi:10.1063/1.4947559

Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit

Yoshito Okuno, Sanpon Vantasin, In Sang Yang, Jangyup Son, Jongill Hong, Yoshito Yannick Tanaka, Yasushi Nakata, Yukihiro Ozaki, Nobuyuki Naka

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Nanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 10⁸Acm²), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm^-1, which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C-C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons.

Original language	English
Article number	163110
Journal	Applied Physics Letters
Volume	108
Issue number	16
DOIs	https://doi.org/10.1063/1.4947559
Publication status	Published - 2016 Apr 18

Bibliographical note

Publisher Copyright:
© 2016 Author(s).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4947559

Cite this

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title = "Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit",

abstract = "Nanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 108Acm2), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm-1, which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C-C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons.",

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T1 - Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit

AU - Okuno, Yoshito

AU - Vantasin, Sanpon

AU - Yang, In Sang

AU - Son, Jangyup

AU - Hong, Jongill

AU - Tanaka, Yoshito Yannick

AU - Nakata, Yasushi

AU - Ozaki, Yukihiro

AU - Naka, Nobuyuki

PY - 2016/4/18

Y1 - 2016/4/18

N2 - Nanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 108Acm2), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm-1, which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C-C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons.

AB - Nanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 108Acm2), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm-1, which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C-C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons.

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Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit

Abstract

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