Si(113) hydrogen desorption kinetics: A temperature programmed desorption study

H. Kim; T. Spila; J. E. Greene

doi:10.1016/S0039-6028(01)01340-1

Si(113) hydrogen desorption kinetics: A temperature programmed desorption study

H. Kim, T. Spila, J. E. Greene

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Hydrogen desorption kinetics from Si(113) surfaces were investigated using D₂ temperature programmed desorption (TPD). For this purpose, clean Si(113)3 × 2 wafers were exposed to atomic deuterium at 200°C for times sufficient to provide D coverages θ_D ranging up to saturation, θ_D,sat. Corresponding low-energy electron diffraction patterns transform from 3 × 2 to 3 × 1-D to 1 × 1 with increasing θ_D. TPD spectra from Si(113) surfaces with θ_D = θ_D,sat consist of a first-order desorption feature (β₁) centered at 515°C and a second-order desorption peak (β₂) at 405°C. β₂ is assigned to D₂ desorption, with an activation energy of 2.16 eV, from a dideuteride surface phase while β₁ is due to desorption from monodeuteride. The β₁ peak consists of two components: β_1,t which arises due to first order, as a result of π-bond induced ordering, D₂ desorption from tetramers and β_1,ad which is due to second-order D₂ desorption from adatoms and second-layer surface atoms. Both β₁ components have activation energies of 2.58 eV. Following monodeuteride desorption, the clean Si(113) surface again exhibits a 3 × 2 reconstruction. The TPD results are explained based upon previously proposed models for the Si(113)3 × 2 reconstructed surface.

Original language	English
Pages (from-to)	L602-L608
Journal	Surface Science
Volume	490
Issue number	1-2
DOIs	https://doi.org/10.1016/S0039-6028(01)01340-1
Publication status	Published - 2001 Sept 1

Bibliographical note

Funding Information:
The authors acknowledge the financial support of the Materials Science Division of the US Department of Energy (DOE) under Award DEFG02-ER9645439. We also appreciate the use of the Center for Microanalysis of Materials at the University of Illinois, which is supported by the DOE.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(01)01340-1

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title = "Si(113) hydrogen desorption kinetics: A temperature programmed desorption study",

abstract = "Hydrogen desorption kinetics from Si(113) surfaces were investigated using D2 temperature programmed desorption (TPD). For this purpose, clean Si(113)3 × 2 wafers were exposed to atomic deuterium at 200°C for times sufficient to provide D coverages θD ranging up to saturation, θD,sat. Corresponding low-energy electron diffraction patterns transform from 3 × 2 to 3 × 1-D to 1 × 1 with increasing θD. TPD spectra from Si(113) surfaces with θD = θD,sat consist of a first-order desorption feature (β1) centered at 515°C and a second-order desorption peak (β2) at 405°C. β2 is assigned to D2 desorption, with an activation energy of 2.16 eV, from a dideuteride surface phase while β1 is due to desorption from monodeuteride. The β1 peak consists of two components: β1,t which arises due to first order, as a result of π-bond induced ordering, D2 desorption from tetramers and β1,ad which is due to second-order D2 desorption from adatoms and second-layer surface atoms. Both β1 components have activation energies of 2.58 eV. Following monodeuteride desorption, the clean Si(113) surface again exhibits a 3 × 2 reconstruction. The TPD results are explained based upon previously proposed models for the Si(113)3 × 2 reconstructed surface.",

author = "H. Kim and T. Spila and Greene, {J. E.}",

note = "Funding Information: The authors acknowledge the financial support of the Materials Science Division of the US Department of Energy (DOE) under Award DEFG02-ER9645439. We also appreciate the use of the Center for Microanalysis of Materials at the University of Illinois, which is supported by the DOE.",

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doi = "10.1016/S0039-6028(01)01340-1",

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T2 - A temperature programmed desorption study

AU - Kim, H.

AU - Spila, T.

AU - Greene, J. E.

N1 - Funding Information: The authors acknowledge the financial support of the Materials Science Division of the US Department of Energy (DOE) under Award DEFG02-ER9645439. We also appreciate the use of the Center for Microanalysis of Materials at the University of Illinois, which is supported by the DOE.

PY - 2001/9/1

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N2 - Hydrogen desorption kinetics from Si(113) surfaces were investigated using D2 temperature programmed desorption (TPD). For this purpose, clean Si(113)3 × 2 wafers were exposed to atomic deuterium at 200°C for times sufficient to provide D coverages θD ranging up to saturation, θD,sat. Corresponding low-energy electron diffraction patterns transform from 3 × 2 to 3 × 1-D to 1 × 1 with increasing θD. TPD spectra from Si(113) surfaces with θD = θD,sat consist of a first-order desorption feature (β1) centered at 515°C and a second-order desorption peak (β2) at 405°C. β2 is assigned to D2 desorption, with an activation energy of 2.16 eV, from a dideuteride surface phase while β1 is due to desorption from monodeuteride. The β1 peak consists of two components: β1,t which arises due to first order, as a result of π-bond induced ordering, D2 desorption from tetramers and β1,ad which is due to second-order D2 desorption from adatoms and second-layer surface atoms. Both β1 components have activation energies of 2.58 eV. Following monodeuteride desorption, the clean Si(113) surface again exhibits a 3 × 2 reconstruction. The TPD results are explained based upon previously proposed models for the Si(113)3 × 2 reconstructed surface.

AB - Hydrogen desorption kinetics from Si(113) surfaces were investigated using D2 temperature programmed desorption (TPD). For this purpose, clean Si(113)3 × 2 wafers were exposed to atomic deuterium at 200°C for times sufficient to provide D coverages θD ranging up to saturation, θD,sat. Corresponding low-energy electron diffraction patterns transform from 3 × 2 to 3 × 1-D to 1 × 1 with increasing θD. TPD spectra from Si(113) surfaces with θD = θD,sat consist of a first-order desorption feature (β1) centered at 515°C and a second-order desorption peak (β2) at 405°C. β2 is assigned to D2 desorption, with an activation energy of 2.16 eV, from a dideuteride surface phase while β1 is due to desorption from monodeuteride. The β1 peak consists of two components: β1,t which arises due to first order, as a result of π-bond induced ordering, D2 desorption from tetramers and β1,ad which is due to second-order D2 desorption from adatoms and second-layer surface atoms. Both β1 components have activation energies of 2.58 eV. Following monodeuteride desorption, the clean Si(113) surface again exhibits a 3 × 2 reconstruction. The TPD results are explained based upon previously proposed models for the Si(113)3 × 2 reconstructed surface.

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Si(113) hydrogen desorption kinetics: A temperature programmed desorption study

Abstract

Bibliographical note

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