Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications

Ivan Perez-Wurfl; Xiaojing Hao; Angus Gentle; Dong Ho Kim; Gavin Conibeer; Martin A. Green

doi:10.1063/1.3240882

Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications

Ivan Perez-Wurfl, Xiaojing Hao, Angus Gentle, Dong Ho Kim, Gavin Conibeer, Martin A. Green

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

125 Citations (Scopus)

Abstract

We fabricated p-i-n diodes by sputtering alternating layers of silicon dioxide and silicon rich oxide with a nominal atomic ratio O/Si=0.7 onto quartz substrates with in situ boron for p -type and phosphorus for n -type doping. After crystallization, dark and illuminated I-V characteristics show a diode behavior with an open circuit voltage of 373 mV. Due to the thinness of the layers and their corresponding high resistivity, lateral current flow results in severe current crowding. This effect is taken into account when extracting the electronic bandgap based on temperature dependent diode I-V measurements.

Original language	English
Article number	153506
Journal	Applied Physics Letters
Volume	95
Issue number	15
DOIs	https://doi.org/10.1063/1.3240882
Publication status	Published - 2009

Bibliographical note

Funding Information:
This work was supported by Stanford University’s Global Climate and Energy Project (GCEP) as well as by the Australian Research Council (ARC) via its Centers of Excellence scheme. D-H. Kim gratefully acknowledges the support by the Korea Research Foundation (MOEHRD) Grant No. KRF-2007-611-D00015.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3240882

Cite this

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title = "Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications",

abstract = "We fabricated p-i-n diodes by sputtering alternating layers of silicon dioxide and silicon rich oxide with a nominal atomic ratio O/Si=0.7 onto quartz substrates with in situ boron for p -type and phosphorus for n -type doping. After crystallization, dark and illuminated I-V characteristics show a diode behavior with an open circuit voltage of 373 mV. Due to the thinness of the layers and their corresponding high resistivity, lateral current flow results in severe current crowding. This effect is taken into account when extracting the electronic bandgap based on temperature dependent diode I-V measurements.",

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AU - Conibeer, Gavin

AU - Green, Martin A.

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Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications

Abstract

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