SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors

Hyun Seop Kim; Kwang Seok Seo; Jungwoo Oh; Ho Young Cha

doi:10.1016/j.rinp.2018.06.009

SF₆ plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors

Hyun Seop Kim, Kwang Seok Seo, Jungwoo Oh, Ho Young Cha

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this study, we have investigated the effects of SF₆ plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl₂/BCl₃-based plasma etching process followed by SF₆ plasma treatment for 1 min. It was found that the SF₆ plasma post-etching treatment was an effective method to improve the electrical isolation characteristics. X-ray photoelectron spectroscopy analysis was carried out to investigate the chemical bonding states of the etched GaN surfaces.

Original language	English
Pages (from-to)	248-249
Number of pages	2
Journal	Results in Physics
Volume	10
DOIs	https://doi.org/10.1016/j.rinp.2018.06.009
Publication status	Published - 2018 Sept

Bibliographical note

Funding Information:
This work was supported by the Civil-Military Technology Cooperation Program (No. 17-CM-MA-03) and Basic Science Research Programs (2015R1A6A1A03031833, 2016R1D1A1B03935445) through NRF of Korea.

Publisher Copyright:
© 2018 The Authors

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.1016/j.rinp.2018.06.009

Cite this

@article{9e6855bdf2b64dbbb5073a13866534bd,

title = "SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors",

abstract = "In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 min. It was found that the SF6 plasma post-etching treatment was an effective method to improve the electrical isolation characteristics. X-ray photoelectron spectroscopy analysis was carried out to investigate the chemical bonding states of the etched GaN surfaces.",

author = "Kim, {Hyun Seop} and Seo, {Kwang Seok} and Jungwoo Oh and Cha, {Ho Young}",

note = "Funding Information: This work was supported by the Civil-Military Technology Cooperation Program (No. 17-CM-MA-03) and Basic Science Research Programs (2015R1A6A1A03031833, 2016R1D1A1B03935445) through NRF of Korea. Publisher Copyright: {\textcopyright} 2018 The Authors",

year = "2018",

month = sep,

doi = "10.1016/j.rinp.2018.06.009",

language = "English",

volume = "10",

pages = "248--249",

journal = "Results in Physics",

issn = "2211-3797",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors

AU - Kim, Hyun Seop

AU - Seo, Kwang Seok

AU - Oh, Jungwoo

AU - Cha, Ho Young

N1 - Funding Information: This work was supported by the Civil-Military Technology Cooperation Program (No. 17-CM-MA-03) and Basic Science Research Programs (2015R1A6A1A03031833, 2016R1D1A1B03935445) through NRF of Korea. Publisher Copyright: © 2018 The Authors

PY - 2018/9

Y1 - 2018/9

N2 - In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 min. It was found that the SF6 plasma post-etching treatment was an effective method to improve the electrical isolation characteristics. X-ray photoelectron spectroscopy analysis was carried out to investigate the chemical bonding states of the etched GaN surfaces.

AB - In this study, we have investigated the effects of SF6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl2/BCl3-based plasma etching process followed by SF6 plasma treatment for 1 min. It was found that the SF6 plasma post-etching treatment was an effective method to improve the electrical isolation characteristics. X-ray photoelectron spectroscopy analysis was carried out to investigate the chemical bonding states of the etched GaN surfaces.

UR - http://www.scopus.com/inward/record.url?scp=85049555813&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049555813&partnerID=8YFLogxK

U2 - 10.1016/j.rinp.2018.06.009

DO - 10.1016/j.rinp.2018.06.009

M3 - Article

AN - SCOPUS:85049555813

SN - 2211-3797

VL - 10

SP - 248

EP - 249

JO - Results in Physics

JF - Results in Physics

ER -