Series resistance influence on performance of waveguidetype germanium photodetectors on silicon

Jeong Min Lee; Minkyu Kim; Woo Young Choi

doi:10.3788/COL201715.100401

Series resistance influence on performance of waveguidetype germanium photodetectors on silicon

Jeong Min Lee, Minkyu Kim, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We investigate influences of series resistances on the performance of 1.55 μm waveguide-type germanium photodetectors (Ge-PDs) on a silicon-on-insulator substrate. The current-voltage characteristics, responsivities, saturation photo-current characteristics, electrical reflection coefficients, and photodetection frequency responses of Ge-PDs, having different series resistances, are measured, and their equivalent circuit models are established. By analyzing the resulting circuit model parameters, we determine how much Ge-PD series resistances influence Ge-PD saturation photo-currents and photodetection bandwidth. These results should be of great use for optimization of Ge-PD fabrication processes and device parameters for target applications.

Original language	English
Article number	100401
Journal	Chinese Optics Letters
Volume	15
Issue number	10
DOIs	https://doi.org/10.3788/COL201715.100401
Publication status	Published - 2017 Oct 10

Bibliographical note

Funding Information:
This work was supported in part by the National Research Foundation of Korea through the Korean Ministry of Science, ICT, and Future Planning under Grant No. 2015R1A2A2A01007772 and in part by the Materials and Parts Technology Research and Development Program through the Korean Ministry of Trade, Industry & Energy under Project No. 10065666.

Publisher Copyright:
© 2017 Chinese Optics Letters.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.3788/COL201715.100401

Cite this

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abstract = "We investigate influences of series resistances on the performance of 1.55 μm waveguide-type germanium photodetectors (Ge-PDs) on a silicon-on-insulator substrate. The current-voltage characteristics, responsivities, saturation photo-current characteristics, electrical reflection coefficients, and photodetection frequency responses of Ge-PDs, having different series resistances, are measured, and their equivalent circuit models are established. By analyzing the resulting circuit model parameters, we determine how much Ge-PD series resistances influence Ge-PD saturation photo-currents and photodetection bandwidth. These results should be of great use for optimization of Ge-PD fabrication processes and device parameters for target applications.",

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PY - 2017/10/10

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N2 - We investigate influences of series resistances on the performance of 1.55 μm waveguide-type germanium photodetectors (Ge-PDs) on a silicon-on-insulator substrate. The current-voltage characteristics, responsivities, saturation photo-current characteristics, electrical reflection coefficients, and photodetection frequency responses of Ge-PDs, having different series resistances, are measured, and their equivalent circuit models are established. By analyzing the resulting circuit model parameters, we determine how much Ge-PD series resistances influence Ge-PD saturation photo-currents and photodetection bandwidth. These results should be of great use for optimization of Ge-PD fabrication processes and device parameters for target applications.

AB - We investigate influences of series resistances on the performance of 1.55 μm waveguide-type germanium photodetectors (Ge-PDs) on a silicon-on-insulator substrate. The current-voltage characteristics, responsivities, saturation photo-current characteristics, electrical reflection coefficients, and photodetection frequency responses of Ge-PDs, having different series resistances, are measured, and their equivalent circuit models are established. By analyzing the resulting circuit model parameters, we determine how much Ge-PD series resistances influence Ge-PD saturation photo-currents and photodetection bandwidth. These results should be of great use for optimization of Ge-PD fabrication processes and device parameters for target applications.

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Series resistance influence on performance of waveguidetype germanium photodetectors on silicon

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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