Sensitivity controllable CMOS image sensor pixel using control gate overlaid on photodiode

Youngcheol Chae; Kunil Choe; Bokyung Kim; Gunhee Han

doi:10.1109/LED.2007.897459

Sensitivity controllable CMOS image sensor pixel using control gate overlaid on photodiode

Youngcheol Chae, Kunil Choe, Bokyung Kim, Gunhee Han

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A new sensitivity controllable pixel structure is proposed for CMOS active-pixel image sensor. The proposed pixel structure has a sensitivity control gate overlaid on the photodiode. The sensitivity of the pixel is controlled by the bias voltage of the control gate that forms a variable accumulation-mode MOS capacitor. The prototype sensor is fabricated with a 0.35-μm CMOS process and consists of 60 × 240 pixels with 5.6- μm pixel pitch. Measurement results show that the sensitivity of the photodiode can be controlled by a factor of 4.

Original language	English
Pages (from-to)	495-498
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	28
Issue number	6
DOIs	https://doi.org/10.1109/LED.2007.897459
Publication status	Published - 2007 Jun

Bibliographical note

Funding Information:
Manuscript received March 23, 2007; revised April 4, 2007. This work was supported in part by the Ministry of Information and Communications, Korea, under the Information Technology Research Center Support Program, and in part by Samsung Electronics Co. Ltd. The review of this letter was arranged by Editor P. Yu.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2007.897459

Cite this

@article{ff2474a20f4f411fad39742acdedc9d1,

title = "Sensitivity controllable CMOS image sensor pixel using control gate overlaid on photodiode",

abstract = "A new sensitivity controllable pixel structure is proposed for CMOS active-pixel image sensor. The proposed pixel structure has a sensitivity control gate overlaid on the photodiode. The sensitivity of the pixel is controlled by the bias voltage of the control gate that forms a variable accumulation-mode MOS capacitor. The prototype sensor is fabricated with a 0.35-μm CMOS process and consists of 60 × 240 pixels with 5.6- μm pixel pitch. Measurement results show that the sensitivity of the photodiode can be controlled by a factor of 4.",

author = "Youngcheol Chae and Kunil Choe and Bokyung Kim and Gunhee Han",

note = "Funding Information: Manuscript received March 23, 2007; revised April 4, 2007. This work was supported in part by the Ministry of Information and Communications, Korea, under the Information Technology Research Center Support Program, and in part by Samsung Electronics Co. Ltd. The review of this letter was arranged by Editor P. Yu.",

year = "2007",

month = jun,

doi = "10.1109/LED.2007.897459",

language = "English",

volume = "28",

pages = "495--498",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Sensitivity controllable CMOS image sensor pixel using control gate overlaid on photodiode

AU - Chae, Youngcheol

AU - Choe, Kunil

AU - Kim, Bokyung

AU - Han, Gunhee

N1 - Funding Information: Manuscript received March 23, 2007; revised April 4, 2007. This work was supported in part by the Ministry of Information and Communications, Korea, under the Information Technology Research Center Support Program, and in part by Samsung Electronics Co. Ltd. The review of this letter was arranged by Editor P. Yu.

PY - 2007/6

Y1 - 2007/6

N2 - A new sensitivity controllable pixel structure is proposed for CMOS active-pixel image sensor. The proposed pixel structure has a sensitivity control gate overlaid on the photodiode. The sensitivity of the pixel is controlled by the bias voltage of the control gate that forms a variable accumulation-mode MOS capacitor. The prototype sensor is fabricated with a 0.35-μm CMOS process and consists of 60 × 240 pixels with 5.6- μm pixel pitch. Measurement results show that the sensitivity of the photodiode can be controlled by a factor of 4.

AB - A new sensitivity controllable pixel structure is proposed for CMOS active-pixel image sensor. The proposed pixel structure has a sensitivity control gate overlaid on the photodiode. The sensitivity of the pixel is controlled by the bias voltage of the control gate that forms a variable accumulation-mode MOS capacitor. The prototype sensor is fabricated with a 0.35-μm CMOS process and consists of 60 × 240 pixels with 5.6- μm pixel pitch. Measurement results show that the sensitivity of the photodiode can be controlled by a factor of 4.

UR - http://www.scopus.com/inward/record.url?scp=34249780349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249780349&partnerID=8YFLogxK

U2 - 10.1109/LED.2007.897459

DO - 10.1109/LED.2007.897459

M3 - Article

AN - SCOPUS:34249780349

SN - 0741-3106

VL - 28

SP - 495

EP - 498

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

Sensitivity controllable CMOS image sensor pixel using control gate overlaid on photodiode

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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