Semimetallic Atomic Layer Deposited TiS2Thin Films for Contact Resistance Improvement of MoS2-based Thin Film Transistor

Hwi Yoon; Jeongwoo Seo; Sangyoon Lee; Jisang Yoo; Yunyong Nam; Jun Hyung Lim; Seung Min Chung; Hyungjun Kim

doi:10.1109/IITC/MAM57687.2023.10154841

Semimetallic Atomic Layer Deposited TiS₂Thin Films for Contact Resistance Improvement of MoS₂-based Thin Film Transistor

Hwi Yoon
, Jeongwoo Seo
, Sangyoon Lee
, Jisang Yoo
, Yunyong Nam
, Jun Hyung Lim
, Seung Min Chung
, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We introduced atomic layer deposition (ALD) of TiS2 as contact layer for MoS2 TFT to reduce the contact resistance. In this study, film properties of low temperature ALD TiS2 according to growth temperature was analyzed. ALD grown TiS2 showed semimetallic nature with low resistivity. In addition, change in properties of MoS2 after TiS2 deposition was investigated by various method. By applying ALD TiS2, we found significant increase in current level and Vth reduction which are attributed to semimetal nature of TiS2. These results imply that ALD TiS2 for contact formation is proper method to achieve high performance of MoS2 TFT.

Original language	English
Title of host publication	2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350310979
DOIs	https://doi.org/10.1109/IITC/MAM57687.2023.10154841
Publication status	Published - 2023
Event	2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Dresden, Germany Duration: 2023 May 22 → 2023 May 25

Publication series

Name	2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings

Conference

Conference	2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023
Country/Territory	Germany
City	Dresden
Period	23/5/22 → 23/5/25

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Access to Document

10.1109/IITC/MAM57687.2023.10154841

Cite this

Yoon, H., Seo, J., Lee, S., Yoo, J., Nam, Y., Lim, J. H., Chung, S. M., & Kim, H. (2023). Semimetallic Atomic Layer Deposited TiS₂Thin Films for Contact Resistance Improvement of MoS₂-based Thin Film Transistor. In 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings (2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC/MAM57687.2023.10154841

Yoon, Hwi ; Seo, Jeongwoo ; Lee, Sangyoon et al. / Semimetallic Atomic Layer Deposited TiS₂Thin Films for Contact Resistance Improvement of MoS₂-based Thin Film Transistor. 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings).

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title = "Semimetallic Atomic Layer Deposited TiS2Thin Films for Contact Resistance Improvement of MoS2-based Thin Film Transistor",

abstract = "We introduced atomic layer deposition (ALD) of TiS2 as contact layer for MoS2 TFT to reduce the contact resistance. In this study, film properties of low temperature ALD TiS2 according to growth temperature was analyzed. ALD grown TiS2 showed semimetallic nature with low resistivity. In addition, change in properties of MoS2 after TiS2 deposition was investigated by various method. By applying ALD TiS2, we found significant increase in current level and Vth reduction which are attributed to semimetal nature of TiS2. These results imply that ALD TiS2 for contact formation is proper method to achieve high performance of MoS2 TFT.",

keywords = "2D material, Titanium disulfide, atomic layer deposition, contact resistance, semimetal, thin film transistor",

author = "Hwi Yoon and Jeongwoo Seo and Sangyoon Lee and Jisang Yoo and Yunyong Nam and Lim, \{Jun Hyung\} and Chung, \{Seung Min\} and Hyungjun Kim",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 ; Conference date: 22-05-2023 Through 25-05-2023",

year = "2023",

doi = "10.1109/IITC/MAM57687.2023.10154841",

language = "English",

series = "2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings",

address = "United States",

}

Yoon, H, Seo, J, Lee, S, Yoo, J, Nam, Y, Lim, JH, Chung, SM & Kim, H 2023, Semimetallic Atomic Layer Deposited TiS₂Thin Films for Contact Resistance Improvement of MoS₂-based Thin Film Transistor. in 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings. 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023, Dresden, Germany, 23/5/22. https://doi.org/10.1109/IITC/MAM57687.2023.10154841

Semimetallic Atomic Layer Deposited TiS₂Thin Films for Contact Resistance Improvement of MoS₂-based Thin Film Transistor. / Yoon, Hwi; Seo, Jeongwoo; Lee, Sangyoon et al.
2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Semimetallic Atomic Layer Deposited TiS2Thin Films for Contact Resistance Improvement of MoS2-based Thin Film Transistor

AU - Yoon, Hwi

AU - Seo, Jeongwoo

AU - Lee, Sangyoon

AU - Yoo, Jisang

AU - Nam, Yunyong

AU - Lim, Jun Hyung

AU - Chung, Seung Min

AU - Kim, Hyungjun

PY - 2023

Y1 - 2023

N2 - We introduced atomic layer deposition (ALD) of TiS2 as contact layer for MoS2 TFT to reduce the contact resistance. In this study, film properties of low temperature ALD TiS2 according to growth temperature was analyzed. ALD grown TiS2 showed semimetallic nature with low resistivity. In addition, change in properties of MoS2 after TiS2 deposition was investigated by various method. By applying ALD TiS2, we found significant increase in current level and Vth reduction which are attributed to semimetal nature of TiS2. These results imply that ALD TiS2 for contact formation is proper method to achieve high performance of MoS2 TFT.

AB - We introduced atomic layer deposition (ALD) of TiS2 as contact layer for MoS2 TFT to reduce the contact resistance. In this study, film properties of low temperature ALD TiS2 according to growth temperature was analyzed. ALD grown TiS2 showed semimetallic nature with low resistivity. In addition, change in properties of MoS2 after TiS2 deposition was investigated by various method. By applying ALD TiS2, we found significant increase in current level and Vth reduction which are attributed to semimetal nature of TiS2. These results imply that ALD TiS2 for contact formation is proper method to achieve high performance of MoS2 TFT.

KW - 2D material

KW - Titanium disulfide

KW - atomic layer deposition

KW - contact resistance

KW - semimetal

KW - thin film transistor

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U2 - 10.1109/IITC/MAM57687.2023.10154841

DO - 10.1109/IITC/MAM57687.2023.10154841

M3 - Conference contribution

AN - SCOPUS:85164153216

T3 - 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings

BT - 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023

Y2 - 22 May 2023 through 25 May 2023

ER -

Yoon H, Seo J, Lee S, Yoo J, Nam Y, Lim JH et al. Semimetallic Atomic Layer Deposited TiS₂Thin Films for Contact Resistance Improvement of MoS₂-based Thin Film Transistor. In 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings). doi: 10.1109/IITC/MAM57687.2023.10154841