Semi-transparent pentacene thin film transistors with NiOx electrode operating at low voltages

D. K. Hwang; Jeong M. Choi; Kimoon Lee; Ji Hoon Park; Eugene Kim; Seongil Im

doi:10.1016/j.tsf.2007.03.164

Semi-transparent pentacene thin film transistors with NiO_x electrode operating at low voltages

D. K. Hwang, Jeong M. Choi, Kimoon Lee, Ji Hoon Park, Eugene Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We demonstrate the fabrication of semi-transparent pentacene-based thin-film transistors (TFTs) with thin poly-4-vinylphenol (PVP)/high-k yttrium oxide (YO_x) double gate dielectric layers and also with thermally-evaporated NiO_x source/drain (S/D) electrodes which show a transmittance of ∼ 30-40% and sheet resistance range of 100-200 Ω/□ (controlled by deposition rate). Our pentacene TFTs with PVP (45 nm)/YO_x (100 nm) layers operated at less than - 5 V, exhibiting a decent saturation mobility (maximum 0.83 cm²/Vs) and on/off current ratios of 10⁴. When the sheet resistance of our semi-transparent NiO_x electrode increased from 100 Ω/□ to 200 Ω/□, the field mobility of our TFT decreased but was found to be still effective as 0.32 cm²/Vs.

Original language	English
Pages (from-to)	1541-1543
Number of pages	3
Journal	Thin Solid Films
Volume	516
Issue number	7
DOIs	https://doi.org/10.1016/j.tsf.2007.03.164
Publication status	Published - 2008 Feb 15

Bibliographical note

Funding Information:
The authors are very appreciative of the financial support from KOSEF (Program No. M1-0214-00-0228), LG. Philips LCD (project year 2005), and they also acknowledge the support from Brain Korea 21 Project.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2007.03.164

Cite this

@article{33a23c9c51b64da99766d27d0df6bc32,

title = "Semi-transparent pentacene thin film transistors with NiOx electrode operating at low voltages",

abstract = "We demonstrate the fabrication of semi-transparent pentacene-based thin-film transistors (TFTs) with thin poly-4-vinylphenol (PVP)/high-k yttrium oxide (YOx) double gate dielectric layers and also with thermally-evaporated NiOx source/drain (S/D) electrodes which show a transmittance of ∼ 30-40% and sheet resistance range of 100-200 Ω/□ (controlled by deposition rate). Our pentacene TFTs with PVP (45 nm)/YOx (100 nm) layers operated at less than - 5 V, exhibiting a decent saturation mobility (maximum 0.83 cm2/Vs) and on/off current ratios of 104. When the sheet resistance of our semi-transparent NiOx electrode increased from 100 Ω/□ to 200 Ω/□, the field mobility of our TFT decreased but was found to be still effective as 0.32 cm2/Vs.",

author = "Hwang, {D. K.} and Choi, {Jeong M.} and Kimoon Lee and Park, {Ji Hoon} and Eugene Kim and Seongil Im",

note = "Funding Information: The authors are very appreciative of the financial support from KOSEF (Program No. M1-0214-00-0228), LG. Philips LCD (project year 2005), and they also acknowledge the support from Brain Korea 21 Project.",

year = "2008",

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doi = "10.1016/j.tsf.2007.03.164",

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AU - Hwang, D. K.

AU - Choi, Jeong M.

AU - Lee, Kimoon

AU - Park, Ji Hoon

AU - Kim, Eugene

AU - Im, Seongil

N1 - Funding Information: The authors are very appreciative of the financial support from KOSEF (Program No. M1-0214-00-0228), LG. Philips LCD (project year 2005), and they also acknowledge the support from Brain Korea 21 Project.

PY - 2008/2/15

Y1 - 2008/2/15

N2 - We demonstrate the fabrication of semi-transparent pentacene-based thin-film transistors (TFTs) with thin poly-4-vinylphenol (PVP)/high-k yttrium oxide (YOx) double gate dielectric layers and also with thermally-evaporated NiOx source/drain (S/D) electrodes which show a transmittance of ∼ 30-40% and sheet resistance range of 100-200 Ω/□ (controlled by deposition rate). Our pentacene TFTs with PVP (45 nm)/YOx (100 nm) layers operated at less than - 5 V, exhibiting a decent saturation mobility (maximum 0.83 cm2/Vs) and on/off current ratios of 104. When the sheet resistance of our semi-transparent NiOx electrode increased from 100 Ω/□ to 200 Ω/□, the field mobility of our TFT decreased but was found to be still effective as 0.32 cm2/Vs.

AB - We demonstrate the fabrication of semi-transparent pentacene-based thin-film transistors (TFTs) with thin poly-4-vinylphenol (PVP)/high-k yttrium oxide (YOx) double gate dielectric layers and also with thermally-evaporated NiOx source/drain (S/D) electrodes which show a transmittance of ∼ 30-40% and sheet resistance range of 100-200 Ω/□ (controlled by deposition rate). Our pentacene TFTs with PVP (45 nm)/YOx (100 nm) layers operated at less than - 5 V, exhibiting a decent saturation mobility (maximum 0.83 cm2/Vs) and on/off current ratios of 104. When the sheet resistance of our semi-transparent NiOx electrode increased from 100 Ω/□ to 200 Ω/□, the field mobility of our TFT decreased but was found to be still effective as 0.32 cm2/Vs.

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