TY - GEN
T1 - Self-triggered SCR in output driver for enhanced ESD robustness
AU - Kang, Taeg Hyun
AU - Ryu, Jun Hyeong
AU - Kim, Moon Ho
AU - Chung, Eui Yong
AU - Robinson-Hahn, Donna
PY - 2008
Y1 - 2008
N2 - This paper presents an enhanced ESD (Electrostatic Discharge) protection solution for output drivers without additional protection devices. The output drivers in low and high voltage CMOS technologies are often susceptible against the ESD stresses with and without the ESD protection devices. The proposed structure shows significantly improved ESD immunity using a consolidated NPBL (N Plus Buried Layer) mask underneath an ESD protection SCR (Silicon Controlled Rectifier) for the VCC to the ground and the output drivers, which are effectively triggered when ESD events occur. This consolidated NPBL plays an important role of a booster for faster triggering than other parasitic devices.
AB - This paper presents an enhanced ESD (Electrostatic Discharge) protection solution for output drivers without additional protection devices. The output drivers in low and high voltage CMOS technologies are often susceptible against the ESD stresses with and without the ESD protection devices. The proposed structure shows significantly improved ESD immunity using a consolidated NPBL (N Plus Buried Layer) mask underneath an ESD protection SCR (Silicon Controlled Rectifier) for the VCC to the ground and the output drivers, which are effectively triggered when ESD events occur. This consolidated NPBL plays an important role of a booster for faster triggering than other parasitic devices.
UR - http://www.scopus.com/inward/record.url?scp=51549099001&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51549099001&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2008.4538933
DO - 10.1109/ISPSD.2008.4538933
M3 - Conference contribution
AN - SCOPUS:51549099001
SN - 1424415322
SN - 9781424415328
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 201
EP - 204
BT - ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's
T2 - ISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's
Y2 - 18 May 2008 through 22 May 2008
ER -