Self-Powered Visible-Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes

Jongtae Ahn; Ji Hoon Kang; Jihoon Kyhm; Hyun Tae Choi; Minju Kim; Dae Hwan Ahn; Dae Yeon Kim; Il Ho Ahn; Jong Bae Park; Soohyung Park; Yeonjin Yi; Jin Dong Song; Min Chul Park; Seongil Im; Do Kyung Hwang

doi:10.1021/acsami.9b22288

Self-Powered Visible-Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe₂/MoS₂ Semivertical Heterojunction Photodiodes

Jongtae Ahn, Ji Hoon Kang, Jihoon Kyhm, Hyun Tae Choi, Minju Kim, Dae Hwan Ahn, Dae Yeon Kim, Il Ho Ahn, Jong Bae Park, Soohyung Park, Yeonjin Yi, Jin Dong Song, Min Chul Park, Seongil Im, Do Kyung Hwang

Department of Physics

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

Two-dimensional (2D) van der Waals (vdW) heterostructures herald new opportunities for conducting fundamental studies of new physical/chemical phenomena and developing diverse nanodevice applications. In particular, vdW heterojunction p-n diodes exhibit great potential as high-performance photodetectors, which play a key role in many optoelectronic applications. Here, we report on 2D MoTe₂/MoS₂ multilayer semivertical vdW heterojunction p-n diodes and their optoelectronic application in self-powered visible-invisible multiband detection and imaging. Our MoTe₂/MoS₂ p-n diode exhibits an excellent electrical performance with an ideality factor of less than 1.5 and a high rectification (ON/OFF) ratio of more than 10⁴. In addition, the photodiode exhibits broad spectral photodetection capability over the range from violet (405 nm) to near-infrared (1310 nm) wavelengths and a remarkable linear dynamic range of 130 dB within an optical power density range of 10^-5 to 1 W/cm² in the photovoltaic mode. Together with these favorable static photoresponses and electrical behaviors, very fast photo- and electrical switching behaviors are clearly observed with negligible changes at modulation frequencies greater than 100 kHz. In particular, inspired by the photoswitching results for periodic red (638 nm) and near-infrared (1310 nm) illumination at 100 kHz, we successfully demonstrate a prototype self-powered visible-invisible multiband image sensor based on the MoTe₂/MoS₂ p-n photodiode as a pixel. Our findings can pave the way for more advanced developments in optoelectronic systems based on 2D vdW heterostructures.

Original language	English
Pages (from-to)	10858-10866
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	12
Issue number	9
DOIs	https://doi.org/10.1021/acsami.9b22288
Publication status	Published - 2020 Mar 4

Bibliographical note

Funding Information:
D.K.H. acknowledges financial support from the Korea Institute of Science and Technology (KIST) Institution Program (Grant Nos. 2E30100, 2E30420, and 2V07850) and from the National Research Foundation of Korea (NRF) (Grant No. 2019R1A2B5B02003419). M.-C.P. acknowledges financial support from the Ministry of Culture, Sports and Tourism (MCST) and the Korea Creative Content Agency (KOCCA) under the Culture Technology (CT) Research & Development Program 2017 (R2017060005, Development of AR Platform based on Hologram). S.I. acknowledges financial support from NRF (SRC program: Grant No. 2017R1A5A1014862, vdWMRC Center).

Publisher Copyright:
Copyright © 2020 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/acsami.9b22288

Cite this

Ahn, J., Kang, J. H., Kyhm, J., Choi, H. T., Kim, M., Ahn, D. H., Kim, D. Y., Ahn, I. H., Park, J. B., Park, S., Yi, Y., Song, J. D., Park, M. C., Im, S., & Hwang, D. K. (2020). Self-Powered Visible-Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe₂/MoS₂ Semivertical Heterojunction Photodiodes. ACS Applied Materials and Interfaces, 12(9), 10858-10866. https://doi.org/10.1021/acsami.9b22288

@article{79e31d7647b54fa7a03d6f74e9997e10,

title = "Self-Powered Visible-Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes",

abstract = "Two-dimensional (2D) van der Waals (vdW) heterostructures herald new opportunities for conducting fundamental studies of new physical/chemical phenomena and developing diverse nanodevice applications. In particular, vdW heterojunction p-n diodes exhibit great potential as high-performance photodetectors, which play a key role in many optoelectronic applications. Here, we report on 2D MoTe2/MoS2 multilayer semivertical vdW heterojunction p-n diodes and their optoelectronic application in self-powered visible-invisible multiband detection and imaging. Our MoTe2/MoS2 p-n diode exhibits an excellent electrical performance with an ideality factor of less than 1.5 and a high rectification (ON/OFF) ratio of more than 104. In addition, the photodiode exhibits broad spectral photodetection capability over the range from violet (405 nm) to near-infrared (1310 nm) wavelengths and a remarkable linear dynamic range of 130 dB within an optical power density range of 10-5 to 1 W/cm2 in the photovoltaic mode. Together with these favorable static photoresponses and electrical behaviors, very fast photo- and electrical switching behaviors are clearly observed with negligible changes at modulation frequencies greater than 100 kHz. In particular, inspired by the photoswitching results for periodic red (638 nm) and near-infrared (1310 nm) illumination at 100 kHz, we successfully demonstrate a prototype self-powered visible-invisible multiband image sensor based on the MoTe2/MoS2 p-n photodiode as a pixel. Our findings can pave the way for more advanced developments in optoelectronic systems based on 2D vdW heterostructures.",

author = "Jongtae Ahn and Kang, {Ji Hoon} and Jihoon Kyhm and Choi, {Hyun Tae} and Minju Kim and Ahn, {Dae Hwan} and Kim, {Dae Yeon} and Ahn, {Il Ho} and Park, {Jong Bae} and Soohyung Park and Yeonjin Yi and Song, {Jin Dong} and Park, {Min Chul} and Seongil Im and Hwang, {Do Kyung}",

note = "Funding Information: D.K.H. acknowledges financial support from the Korea Institute of Science and Technology (KIST) Institution Program (Grant Nos. 2E30100, 2E30420, and 2V07850) and from the National Research Foundation of Korea (NRF) (Grant No. 2019R1A2B5B02003419). M.-C.P. acknowledges financial support from the Ministry of Culture, Sports and Tourism (MCST) and the Korea Creative Content Agency (KOCCA) under the Culture Technology (CT) Research & Development Program 2017 (R2017060005, Development of AR Platform based on Hologram). S.I. acknowledges financial support from NRF (SRC program: Grant No. 2017R1A5A1014862, vdWMRC Center). Publisher Copyright: Copyright {\textcopyright} 2020 American Chemical Society.",

year = "2020",

month = mar,

day = "4",

doi = "10.1021/acsami.9b22288",

language = "English",

volume = "12",

pages = "10858--10866",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "9",

}

Ahn, J, Kang, JH, Kyhm, J, Choi, HT, Kim, M, Ahn, DH, Kim, DY, Ahn, IH, Park, JB, Park, S, Yi, Y, Song, JD, Park, MC, Im, S & Hwang, DK 2020, 'Self-Powered Visible-Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe₂/MoS₂ Semivertical Heterojunction Photodiodes', ACS Applied Materials and Interfaces, vol. 12, no. 9, pp. 10858-10866. https://doi.org/10.1021/acsami.9b22288

TY - JOUR

T1 - Self-Powered Visible-Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes

AU - Ahn, Jongtae

AU - Kang, Ji Hoon

AU - Kyhm, Jihoon

AU - Choi, Hyun Tae

AU - Kim, Minju

AU - Ahn, Dae Hwan

AU - Kim, Dae Yeon

AU - Ahn, Il Ho

AU - Park, Jong Bae

AU - Park, Soohyung

AU - Yi, Yeonjin

AU - Song, Jin Dong

AU - Park, Min Chul

AU - Im, Seongil

AU - Hwang, Do Kyung

N1 - Funding Information: D.K.H. acknowledges financial support from the Korea Institute of Science and Technology (KIST) Institution Program (Grant Nos. 2E30100, 2E30420, and 2V07850) and from the National Research Foundation of Korea (NRF) (Grant No. 2019R1A2B5B02003419). M.-C.P. acknowledges financial support from the Ministry of Culture, Sports and Tourism (MCST) and the Korea Creative Content Agency (KOCCA) under the Culture Technology (CT) Research & Development Program 2017 (R2017060005, Development of AR Platform based on Hologram). S.I. acknowledges financial support from NRF (SRC program: Grant No. 2017R1A5A1014862, vdWMRC Center). Publisher Copyright: Copyright © 2020 American Chemical Society.

PY - 2020/3/4

Y1 - 2020/3/4

N2 - Two-dimensional (2D) van der Waals (vdW) heterostructures herald new opportunities for conducting fundamental studies of new physical/chemical phenomena and developing diverse nanodevice applications. In particular, vdW heterojunction p-n diodes exhibit great potential as high-performance photodetectors, which play a key role in many optoelectronic applications. Here, we report on 2D MoTe2/MoS2 multilayer semivertical vdW heterojunction p-n diodes and their optoelectronic application in self-powered visible-invisible multiband detection and imaging. Our MoTe2/MoS2 p-n diode exhibits an excellent electrical performance with an ideality factor of less than 1.5 and a high rectification (ON/OFF) ratio of more than 104. In addition, the photodiode exhibits broad spectral photodetection capability over the range from violet (405 nm) to near-infrared (1310 nm) wavelengths and a remarkable linear dynamic range of 130 dB within an optical power density range of 10-5 to 1 W/cm2 in the photovoltaic mode. Together with these favorable static photoresponses and electrical behaviors, very fast photo- and electrical switching behaviors are clearly observed with negligible changes at modulation frequencies greater than 100 kHz. In particular, inspired by the photoswitching results for periodic red (638 nm) and near-infrared (1310 nm) illumination at 100 kHz, we successfully demonstrate a prototype self-powered visible-invisible multiband image sensor based on the MoTe2/MoS2 p-n photodiode as a pixel. Our findings can pave the way for more advanced developments in optoelectronic systems based on 2D vdW heterostructures.

AB - Two-dimensional (2D) van der Waals (vdW) heterostructures herald new opportunities for conducting fundamental studies of new physical/chemical phenomena and developing diverse nanodevice applications. In particular, vdW heterojunction p-n diodes exhibit great potential as high-performance photodetectors, which play a key role in many optoelectronic applications. Here, we report on 2D MoTe2/MoS2 multilayer semivertical vdW heterojunction p-n diodes and their optoelectronic application in self-powered visible-invisible multiband detection and imaging. Our MoTe2/MoS2 p-n diode exhibits an excellent electrical performance with an ideality factor of less than 1.5 and a high rectification (ON/OFF) ratio of more than 104. In addition, the photodiode exhibits broad spectral photodetection capability over the range from violet (405 nm) to near-infrared (1310 nm) wavelengths and a remarkable linear dynamic range of 130 dB within an optical power density range of 10-5 to 1 W/cm2 in the photovoltaic mode. Together with these favorable static photoresponses and electrical behaviors, very fast photo- and electrical switching behaviors are clearly observed with negligible changes at modulation frequencies greater than 100 kHz. In particular, inspired by the photoswitching results for periodic red (638 nm) and near-infrared (1310 nm) illumination at 100 kHz, we successfully demonstrate a prototype self-powered visible-invisible multiband image sensor based on the MoTe2/MoS2 p-n photodiode as a pixel. Our findings can pave the way for more advanced developments in optoelectronic systems based on 2D vdW heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=85080046040&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85080046040&partnerID=8YFLogxK

U2 - 10.1021/acsami.9b22288

DO - 10.1021/acsami.9b22288

M3 - Article

C2 - 32037787

AN - SCOPUS:85080046040

SN - 1944-8244

VL - 12

SP - 10858

EP - 10866

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 9

ER -