Self-pattern process of InZnO thin-film transistors using photosensitive precursors

Hee Jun Kim; Yeong Gyu Kim; Sung Pyo Park; Dongwoo Kim; Na Eun Kim; Jong Sun Choi; Hyun Jae Kim

doi:10.1002/sdtp.11619

Self-pattern process of InZnO thin-film transistors using photosensitive precursors

Hee Jun Kim, Yeong Gyu Kim, Sung Pyo Park, Dongwoo Kim, Na Eun Kim, Jong Sun Choi, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

We demonstrated self-patternable InZnO (IZO) thin-film transistors (TFTS) using photosensitive precursors. UV-irradiated films became cross-linked and solution-processed IZO films were patterned successfully. Compared to self-patterned IZO TFTs using photosensitive activators, precursor-based self-patterned IZO TFTs have better electrical characteristics and stability due to having less organic residues.

Original language	English
Pages (from-to)	180-182
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	48
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.11619
Publication status	Published - 2017
Event	SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States Duration: 2017 May 21 → 2017 May 26

Bibliographical note

Funding Information:
This work was supported by the Industrial Strategic Technology Development Program (10063038, Development of sub-micro in-situ light patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).

Publisher Copyright:
© (2017) by SID-the Society for Information Display. All rights reserved.

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/sdtp.11619

Cite this

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title = "Self-pattern process of InZnO thin-film transistors using photosensitive precursors",

abstract = "We demonstrated self-patternable InZnO (IZO) thin-film transistors (TFTS) using photosensitive precursors. UV-irradiated films became cross-linked and solution-processed IZO films were patterned successfully. Compared to self-patterned IZO TFTs using photosensitive activators, precursor-based self-patterned IZO TFTs have better electrical characteristics and stability due to having less organic residues.",

author = "Kim, {Hee Jun} and Kim, {Yeong Gyu} and Park, {Sung Pyo} and Dongwoo Kim and Kim, {Na Eun} and Choi, {Jong Sun} and Kim, {Hyun Jae}",

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doi = "10.1002/sdtp.11619",

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T1 - Self-pattern process of InZnO thin-film transistors using photosensitive precursors

AU - Kim, Hee Jun

AU - Kim, Yeong Gyu

AU - Park, Sung Pyo

AU - Kim, Dongwoo

AU - Kim, Na Eun

AU - Choi, Jong Sun

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the Industrial Strategic Technology Development Program (10063038, Development of sub-micro in-situ light patterning to minimize damage on flexible substrates) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). Publisher Copyright: © (2017) by SID-the Society for Information Display. All rights reserved.

PY - 2017

Y1 - 2017

N2 - We demonstrated self-patternable InZnO (IZO) thin-film transistors (TFTS) using photosensitive precursors. UV-irradiated films became cross-linked and solution-processed IZO films were patterned successfully. Compared to self-patterned IZO TFTs using photosensitive activators, precursor-based self-patterned IZO TFTs have better electrical characteristics and stability due to having less organic residues.

AB - We demonstrated self-patternable InZnO (IZO) thin-film transistors (TFTS) using photosensitive precursors. UV-irradiated films became cross-linked and solution-processed IZO films were patterned successfully. Compared to self-patterned IZO TFTs using photosensitive activators, precursor-based self-patterned IZO TFTs have better electrical characteristics and stability due to having less organic residues.

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JO - Digest of Technical Papers - SID International Symposium

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ER -

Self-pattern process of InZnO thin-film transistors using photosensitive precursors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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