Self-heating effect of GAAFET and FinFET for over 2-V applications using TCAD simulation

Seungju Hwang; Ilgu Yun

doi:10.1109/ICEIC54506.2022.9748640

Self-heating effect of GAAFET and FinFET for over 2-V applications using TCAD simulation

Seungju Hwang, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents a comparison of the self-heating effect (SHE) of analog FinFETs and gate-all-around FETs (GAAFETs) using TCAD. In addition, the analysis of dummy patterns for thermal isolation is evaluated.

Original language	English
Title of host publication	2022 International Conference on Electronics, Information, and Communication, ICEIC 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665409346
DOIs	https://doi.org/10.1109/ICEIC54506.2022.9748640
Publication status	Published - 2022
Event	2022 International Conference on Electronics, Information, and Communication, ICEIC 2022 - Jeju, Korea, Republic of Duration: 2022 Feb 6 → 2022 Feb 9

Publication series

Name	2022 International Conference on Electronics, Information, and Communication, ICEIC 2022

Conference

Conference	2022 International Conference on Electronics, Information, and Communication, ICEIC 2022
Country/Territory	Korea, Republic of
City	Jeju
Period	22/2/6 → 22/2/9

Bibliographical note

Funding Information:
ACKNOWLEDGMENT The EDA tool was supported by the IC Design Education Center.

Publisher Copyright:
© 2022 IEEE.

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Information Systems
Information Systems and Management
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1109/ICEIC54506.2022.9748640

Cite this

Hwang, S., & Yun, I. (2022). Self-heating effect of GAAFET and FinFET for over 2-V applications using TCAD simulation. In 2022 International Conference on Electronics, Information, and Communication, ICEIC 2022 (2022 International Conference on Electronics, Information, and Communication, ICEIC 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEIC54506.2022.9748640

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title = "Self-heating effect of GAAFET and FinFET for over 2-V applications using TCAD simulation",

abstract = "This paper presents a comparison of the self-heating effect (SHE) of analog FinFETs and gate-all-around FETs (GAAFETs) using TCAD. In addition, the analysis of dummy patterns for thermal isolation is evaluated.",

author = "Seungju Hwang and Ilgu Yun",

note = "Funding Information: ACKNOWLEDGMENT The EDA tool was supported by the IC Design Education Center. Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Conference on Electronics, Information, and Communication, ICEIC 2022 ; Conference date: 06-02-2022 Through 09-02-2022",

year = "2022",

doi = "10.1109/ICEIC54506.2022.9748640",

language = "English",

series = "2022 International Conference on Electronics, Information, and Communication, ICEIC 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 International Conference on Electronics, Information, and Communication, ICEIC 2022",

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}

Hwang, S & Yun, I 2022, Self-heating effect of GAAFET and FinFET for over 2-V applications using TCAD simulation. in 2022 International Conference on Electronics, Information, and Communication, ICEIC 2022. 2022 International Conference on Electronics, Information, and Communication, ICEIC 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Conference on Electronics, Information, and Communication, ICEIC 2022, Jeju, Korea, Republic of, 22/2/6. https://doi.org/10.1109/ICEIC54506.2022.9748640

Self-heating effect of GAAFET and FinFET for over 2-V applications using TCAD simulation. / Hwang, Seungju; Yun, Ilgu.
2022 International Conference on Electronics, Information, and Communication, ICEIC 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Conference on Electronics, Information, and Communication, ICEIC 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Hwang, Seungju

AU - Yun, Ilgu

PY - 2022

Y1 - 2022

N2 - This paper presents a comparison of the self-heating effect (SHE) of analog FinFETs and gate-all-around FETs (GAAFETs) using TCAD. In addition, the analysis of dummy patterns for thermal isolation is evaluated.

AB - This paper presents a comparison of the self-heating effect (SHE) of analog FinFETs and gate-all-around FETs (GAAFETs) using TCAD. In addition, the analysis of dummy patterns for thermal isolation is evaluated.

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M3 - Conference contribution

AN - SCOPUS:85128804232

T3 - 2022 International Conference on Electronics, Information, and Communication, ICEIC 2022

BT - 2022 International Conference on Electronics, Information, and Communication, ICEIC 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Conference on Electronics, Information, and Communication, ICEIC 2022

Y2 - 6 February 2022 through 9 February 2022

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Hwang S, Yun I. Self-heating effect of GAAFET and FinFET for over 2-V applications using TCAD simulation. In 2022 International Conference on Electronics, Information, and Communication, ICEIC 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Conference on Electronics, Information, and Communication, ICEIC 2022). doi: 10.1109/ICEIC54506.2022.9748640

Self-heating effect of GAAFET and FinFET for over 2-V applications using TCAD simulation

Abstract

Publication series

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Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

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