Self-assembly of organic channel/polymer dielectric layer in solution process for low-voltage thin-film transistors

Ji Hoon Park; Kwang H. Lee; Sung Jin Mun; Gunwoo Ko; Seung Jin Heo; Jae Hoon Kim; Eugene Kim; Seongil Im

doi:10.1016/j.orgel.2010.07.020

Self-assembly of organic channel/polymer dielectric layer in solution process for low-voltage thin-film transistors

Ji Hoon Park, Kwang H. Lee, Sung Jin Mun, Gunwoo Ko, Seung Jin Heo, Jae Hoon Kim, Eugene Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

We report on the solution-processed thin-film transistors (TFTs) fabricated by the vertical flowing of the viscous 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and isotatic (i-) poly-(methyl methacrylate) (PMMA) blend. According to the optical-absorption and X-ray diffraction spectra, the solution-processed film appeared self-assembled with TIPS-pentacene (up) and i-PMMA dielectric (down) layers on substrates. As fabricated on a highly capacitive 100 nm-thick AlO_x dielectric, our device displayed a high mobility of 0.34 cm²/V s, a low operation voltage of -15 V, and little hysteresis.

Original language	English
Pages (from-to)	1688-1692
Number of pages	5
Journal	Organic Electronics
Volume	11
Issue number	10
DOIs	https://doi.org/10.1016/j.orgel.2010.07.020
Publication status	Published - 2010 Oct

Bibliographical note

Funding Information:
The authors acknowledge the financial support from KOSEF (NRL program, No. 2009-8-0403 ), the 21st Century Frontier R&D Program funded by the MKE (Information Display R&D center, F0004022-2009 ), and Brain Korea 21 Project. J.H. Park acknowledges the Seoul Science Fellowship.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Chemistry(all)
Biomaterials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.orgel.2010.07.020

Cite this

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title = "Self-assembly of organic channel/polymer dielectric layer in solution process for low-voltage thin-film transistors",

abstract = "We report on the solution-processed thin-film transistors (TFTs) fabricated by the vertical flowing of the viscous 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and isotatic (i-) poly-(methyl methacrylate) (PMMA) blend. According to the optical-absorption and X-ray diffraction spectra, the solution-processed film appeared self-assembled with TIPS-pentacene (up) and i-PMMA dielectric (down) layers on substrates. As fabricated on a highly capacitive 100 nm-thick AlOx dielectric, our device displayed a high mobility of 0.34 cm2/V s, a low operation voltage of -15 V, and little hysteresis.",

author = "Park, {Ji Hoon} and Lee, {Kwang H.} and Mun, {Sung Jin} and Gunwoo Ko and Heo, {Seung Jin} and Kim, {Jae Hoon} and Eugene Kim and Seongil Im",

note = "Funding Information: The authors acknowledge the financial support from KOSEF (NRL program, No. 2009-8-0403 ), the 21st Century Frontier R&D Program funded by the MKE (Information Display R&D center, F0004022-2009 ), and Brain Korea 21 Project. J.H. Park acknowledges the Seoul Science Fellowship.",

year = "2010",

month = oct,

doi = "10.1016/j.orgel.2010.07.020",

language = "English",

volume = "11",

pages = "1688--1692",

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T1 - Self-assembly of organic channel/polymer dielectric layer in solution process for low-voltage thin-film transistors

AU - Park, Ji Hoon

AU - Lee, Kwang H.

AU - Mun, Sung Jin

AU - Ko, Gunwoo

AU - Heo, Seung Jin

AU - Kim, Jae Hoon

AU - Kim, Eugene

AU - Im, Seongil

N1 - Funding Information: The authors acknowledge the financial support from KOSEF (NRL program, No. 2009-8-0403 ), the 21st Century Frontier R&D Program funded by the MKE (Information Display R&D center, F0004022-2009 ), and Brain Korea 21 Project. J.H. Park acknowledges the Seoul Science Fellowship.

PY - 2010/10

Y1 - 2010/10

N2 - We report on the solution-processed thin-film transistors (TFTs) fabricated by the vertical flowing of the viscous 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and isotatic (i-) poly-(methyl methacrylate) (PMMA) blend. According to the optical-absorption and X-ray diffraction spectra, the solution-processed film appeared self-assembled with TIPS-pentacene (up) and i-PMMA dielectric (down) layers on substrates. As fabricated on a highly capacitive 100 nm-thick AlOx dielectric, our device displayed a high mobility of 0.34 cm2/V s, a low operation voltage of -15 V, and little hysteresis.

AB - We report on the solution-processed thin-film transistors (TFTs) fabricated by the vertical flowing of the viscous 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and isotatic (i-) poly-(methyl methacrylate) (PMMA) blend. According to the optical-absorption and X-ray diffraction spectra, the solution-processed film appeared self-assembled with TIPS-pentacene (up) and i-PMMA dielectric (down) layers on substrates. As fabricated on a highly capacitive 100 nm-thick AlOx dielectric, our device displayed a high mobility of 0.34 cm2/V s, a low operation voltage of -15 V, and little hysteresis.

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JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

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Self-assembly of organic channel/polymer dielectric layer in solution process for low-voltage thin-film transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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