Self-assembled monolayer modified back interface of oxide semiconductor as a protection layer

Seung Hwan Cho; Jeong Soo Lee; Seung Min Song; Tae Young Choi; Jung Hun Noh; Jang Yeon Kwon; Min Koo Han

Self-assembled monolayer modified back interface of oxide semiconductor as a protection layer

Seung Hwan Cho, Jeong Soo Lee, Seung Min Song, Tae Young Choi, Jung Hun Noh, Jang Yeon Kwon, Min Koo Han

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We successfully deposited SAM (Self-assembled Monolayer) as a protection layer of the back interface of an oxide semiconductor to reduce plasma and wet etchant damages during the source / drain patterning process. In addition, SAM inhibited the oxidization of Ti and the oxygen extraction from the IGZO layer.

Original language	English
Title of host publication	Society for Information Display - 18th International Display Workshops 2011, IDW'11
Pages	595-598
Number of pages	4
Publication status	Published - 2011
Event	18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: 2011 Dec 7 → 2011 Dec 9

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Other

Other	18th International Display Workshops 2011, IDW 2011
Country/Territory	Japan
City	Nagoya
Period	11/12/7 → 11/12/9

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@inproceedings{4ef516e3bba9400f80b825edb28a60af,

title = "Self-assembled monolayer modified back interface of oxide semiconductor as a protection layer",

abstract = "We successfully deposited SAM (Self-assembled Monolayer) as a protection layer of the back interface of an oxide semiconductor to reduce plasma and wet etchant damages during the source / drain patterning process. In addition, SAM inhibited the oxidization of Ti and the oxygen extraction from the IGZO layer.",

author = "Cho, {Seung Hwan} and Lee, {Jeong Soo} and Song, {Seung Min} and Choi, {Tae Young} and Noh, {Jung Hun} and Kwon, {Jang Yeon} and Han, {Min Koo}",

year = "2011",

language = "English",

isbn = "9781622761906",

series = "Proceedings of the International Display Workshops",

pages = "595--598",

booktitle = "Society for Information Display - 18th International Display Workshops 2011, IDW'11",

note = "18th International Display Workshops 2011, IDW 2011 ; Conference date: 07-12-2011 Through 09-12-2011",

}

Cho, SH, Lee, JS, Song, SM, Choi, TY, Noh, JH, Kwon, JY & Han, MK 2011, Self-assembled monolayer modified back interface of oxide semiconductor as a protection layer. in Society for Information Display - 18th International Display Workshops 2011, IDW'11. Proceedings of the International Display Workshops, vol. 1, pp. 595-598, 18th International Display Workshops 2011, IDW 2011, Nagoya, Japan, 11/12/7.

Self-assembled monolayer modified back interface of oxide semiconductor as a protection layer. / Cho, Seung Hwan; Lee, Jeong Soo; Song, Seung Min et al.
Society for Information Display - 18th International Display Workshops 2011, IDW'11. 2011. p. 595-598 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Self-assembled monolayer modified back interface of oxide semiconductor as a protection layer

AU - Cho, Seung Hwan

AU - Lee, Jeong Soo

AU - Song, Seung Min

AU - Choi, Tae Young

AU - Noh, Jung Hun

AU - Kwon, Jang Yeon

AU - Han, Min Koo

PY - 2011

Y1 - 2011

N2 - We successfully deposited SAM (Self-assembled Monolayer) as a protection layer of the back interface of an oxide semiconductor to reduce plasma and wet etchant damages during the source / drain patterning process. In addition, SAM inhibited the oxidization of Ti and the oxygen extraction from the IGZO layer.

AB - We successfully deposited SAM (Self-assembled Monolayer) as a protection layer of the back interface of an oxide semiconductor to reduce plasma and wet etchant damages during the source / drain patterning process. In addition, SAM inhibited the oxidization of Ti and the oxygen extraction from the IGZO layer.

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M3 - Conference contribution

AN - SCOPUS:84870658988

SN - 9781622761906

T3 - Proceedings of the International Display Workshops

SP - 595

EP - 598

BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11

T2 - 18th International Display Workshops 2011, IDW 2011

Y2 - 7 December 2011 through 9 December 2011

ER -

Self-assembled monolayer modified back interface of oxide semiconductor as a protection layer

Abstract

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Other

All Science Journal Classification (ASJC) codes

UN SDGs

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