Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)- tosylate electrodes for high performance organic field-effect transistors

Jung Ah Lim; Song Hee Park; Ji Hye Baek; Young Dong Ko; Hwa Sung Lee; Kilwon Cho; Jun Young Lee; Dong Ryeol Lee; Jeong Ho Cho

doi:10.1063/1.3273862

Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)- tosylate electrodes for high performance organic field-effect transistors

Jung Ah Lim, Song Hee Park, Ji Hye Baek, Young Dong Ko, Hwa Sung Lee, Kilwon Cho, Jun Young Lee, Dong Ryeol Lee, Jeong Ho Cho

Department of Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have improved the performance of pentacene field-effect transistors by using highly conductive poly(3,4-ethylenedioxythiophene)-tosylate (PEDOT-Tos) source-drain electrodes (∼ 10³ S/cm) formed by a simple solution-based process. A high field-effect mobility of 0.25 cm² /Vs and an ON/OFF current ratio of 10⁷ were obtained in pentacene-based bottom contact organic field-effect transistors (OFETs), which constitutes an improvement over OFETs based on Au and PEDOT:PSS electrodes. Two-dimensional grazing incidence x-ray diffraction and ultraviolet photoemission spectroscopy results confirmed that the crystalline properties of the pentacene film and the hole injection from the PEDOT-Tos electrode to the pentacene layer are more efficient than those from Au and PEDOT:PSS electrodes.

Original language	English
Article number	233509
Journal	Applied Physics Letters
Volume	95
Issue number	23
DOIs	https://doi.org/10.1063/1.3273862
Publication status	Published - 2009

Bibliographical note

Funding Information:
The authors thank the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. R15-2008-006-01002-0) and the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy for their financial support and the Pohang Accelerator Laboratory for providing the 4B1 and 5A beamlines used in this study.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)- tosylate electrodes for high performance organic field-effect transistors",

abstract = "We have improved the performance of pentacene field-effect transistors by using highly conductive poly(3,4-ethylenedioxythiophene)-tosylate (PEDOT-Tos) source-drain electrodes (∼ 103 S/cm) formed by a simple solution-based process. A high field-effect mobility of 0.25 cm2 /Vs and an ON/OFF current ratio of 107 were obtained in pentacene-based bottom contact organic field-effect transistors (OFETs), which constitutes an improvement over OFETs based on Au and PEDOT:PSS electrodes. Two-dimensional grazing incidence x-ray diffraction and ultraviolet photoemission spectroscopy results confirmed that the crystalline properties of the pentacene film and the hole injection from the PEDOT-Tos electrode to the pentacene layer are more efficient than those from Au and PEDOT:PSS electrodes.",

author = "Lim, {Jung Ah} and Park, {Song Hee} and Baek, {Ji Hye} and Ko, {Young Dong} and Lee, {Hwa Sung} and Kilwon Cho and Lee, {Jun Young} and Lee, {Dong Ryeol} and Cho, {Jeong Ho}",

note = "Funding Information: The authors thank the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. R15-2008-006-01002-0) and the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy for their financial support and the Pohang Accelerator Laboratory for providing the 4B1 and 5A beamlines used in this study.",

year = "2009",

doi = "10.1063/1.3273862",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

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T1 - Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)- tosylate electrodes for high performance organic field-effect transistors

AU - Lim, Jung Ah

AU - Park, Song Hee

AU - Baek, Ji Hye

AU - Ko, Young Dong

AU - Lee, Hwa Sung

AU - Cho, Kilwon

AU - Lee, Jun Young

AU - Lee, Dong Ryeol

AU - Cho, Jeong Ho

N1 - Funding Information: The authors thank the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. R15-2008-006-01002-0) and the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy for their financial support and the Pohang Accelerator Laboratory for providing the 4B1 and 5A beamlines used in this study.

PY - 2009

Y1 - 2009

N2 - We have improved the performance of pentacene field-effect transistors by using highly conductive poly(3,4-ethylenedioxythiophene)-tosylate (PEDOT-Tos) source-drain electrodes (∼ 103 S/cm) formed by a simple solution-based process. A high field-effect mobility of 0.25 cm2 /Vs and an ON/OFF current ratio of 107 were obtained in pentacene-based bottom contact organic field-effect transistors (OFETs), which constitutes an improvement over OFETs based on Au and PEDOT:PSS electrodes. Two-dimensional grazing incidence x-ray diffraction and ultraviolet photoemission spectroscopy results confirmed that the crystalline properties of the pentacene film and the hole injection from the PEDOT-Tos electrode to the pentacene layer are more efficient than those from Au and PEDOT:PSS electrodes.

AB - We have improved the performance of pentacene field-effect transistors by using highly conductive poly(3,4-ethylenedioxythiophene)-tosylate (PEDOT-Tos) source-drain electrodes (∼ 103 S/cm) formed by a simple solution-based process. A high field-effect mobility of 0.25 cm2 /Vs and an ON/OFF current ratio of 107 were obtained in pentacene-based bottom contact organic field-effect transistors (OFETs), which constitutes an improvement over OFETs based on Au and PEDOT:PSS electrodes. Two-dimensional grazing incidence x-ray diffraction and ultraviolet photoemission spectroscopy results confirmed that the crystalline properties of the pentacene film and the hole injection from the PEDOT-Tos electrode to the pentacene layer are more efficient than those from Au and PEDOT:PSS electrodes.

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Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)- tosylate electrodes for high performance organic field-effect transistors

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