Selective wet etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT

Jong Lam Lee; Eun A. Moon; Jung Woo Oh; Seong Wook Ryu; Hyung Mo Yoo

doi:10.1049/el:20001337

Selective wet etching of GaAs on Al_0.24Ga_0.76As for GaAs/Al_0.24Ga_0.76As/In_0.22Ga_0.78As PHEMT

Jong Lam Lee, Eun A. Moon, Jung Woo Oh, Seong Wook Ryu, Hyung Mo Yoo

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A selective etching solution of GaAs over Al_0.24Ga_0.76As, composed of acid-buffer solution (citric acid monohydrate+potassium citrate) and H₂O₂, has been developed for GaAs/Al_0.24Ga_0.76As/In_0.22Ga_0.78As PHEMT applications. The best selectivity of 776 was achieved using the mixed solution (citric acid-buffer solution:H₂O₂ = 5:1). The etch rate of GaAs in the solution is as low as 46.6 angstroms/s. Both the low etch rate of GaAs and the high selectivity exhibit the standard deviation of pinch-off voltage of 1.0 μm-gate PHEMTs as low as ±0.029 V across a 3 in wafer. This demonstrates the applicability of this solution to the gate recess process.

Original language	English
Pages (from-to)	1974-1975
Number of pages	2
Journal	Electronics Letters
Volume	36
Issue number	23
DOIs	https://doi.org/10.1049/el:20001337
Publication status	Published - 2000 Nov 9

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1049/el:20001337

Cite this

@article{b64f15ff85e0494eb3ddc14b672eb14f,

title = "Selective wet etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT",

abstract = "A selective etching solution of GaAs over Al0.24Ga0.76As, composed of acid-buffer solution (citric acid monohydrate+potassium citrate) and H2O2, has been developed for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT applications. The best selectivity of 776 was achieved using the mixed solution (citric acid-buffer solution:H2O2 = 5:1). The etch rate of GaAs in the solution is as low as 46.6 angstroms/s. Both the low etch rate of GaAs and the high selectivity exhibit the standard deviation of pinch-off voltage of 1.0 μm-gate PHEMTs as low as ±0.029 V across a 3 in wafer. This demonstrates the applicability of this solution to the gate recess process.",

author = "Lee, {Jong Lam} and Moon, {Eun A.} and Oh, {Jung Woo} and Ryu, {Seong Wook} and Yoo, {Hyung Mo}",

year = "2000",

month = nov,

day = "9",

doi = "10.1049/el:20001337",

language = "English",

volume = "36",

pages = "1974--1975",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "23",

}

TY - JOUR

T1 - Selective wet etching of GaAs on Al0.24Ga0.76As for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT

AU - Lee, Jong Lam

AU - Moon, Eun A.

AU - Oh, Jung Woo

AU - Ryu, Seong Wook

AU - Yoo, Hyung Mo

PY - 2000/11/9

Y1 - 2000/11/9

N2 - A selective etching solution of GaAs over Al0.24Ga0.76As, composed of acid-buffer solution (citric acid monohydrate+potassium citrate) and H2O2, has been developed for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT applications. The best selectivity of 776 was achieved using the mixed solution (citric acid-buffer solution:H2O2 = 5:1). The etch rate of GaAs in the solution is as low as 46.6 angstroms/s. Both the low etch rate of GaAs and the high selectivity exhibit the standard deviation of pinch-off voltage of 1.0 μm-gate PHEMTs as low as ±0.029 V across a 3 in wafer. This demonstrates the applicability of this solution to the gate recess process.

AB - A selective etching solution of GaAs over Al0.24Ga0.76As, composed of acid-buffer solution (citric acid monohydrate+potassium citrate) and H2O2, has been developed for GaAs/Al0.24Ga0.76As/In0.22Ga0.78As PHEMT applications. The best selectivity of 776 was achieved using the mixed solution (citric acid-buffer solution:H2O2 = 5:1). The etch rate of GaAs in the solution is as low as 46.6 angstroms/s. Both the low etch rate of GaAs and the high selectivity exhibit the standard deviation of pinch-off voltage of 1.0 μm-gate PHEMTs as low as ±0.029 V across a 3 in wafer. This demonstrates the applicability of this solution to the gate recess process.

UR - http://www.scopus.com/inward/record.url?scp=0034319590&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034319590&partnerID=8YFLogxK

U2 - 10.1049/el:20001337

DO - 10.1049/el:20001337

M3 - Article

AN - SCOPUS:0034319590

SN - 0013-5194

VL - 36

SP - 1974

EP - 1975

JO - Electronics Letters

JF - Electronics Letters

IS - 23

ER -

Selective wet etching of GaAs on Al_0.24Ga_0.76As for GaAs/Al_0.24Ga_0.76As/In_0.22Ga_0.78As PHEMT

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this