Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

W. Y. Loh; P. Y. Hung; B. E. Coss; P. Kalra; Injo Ok; Greg Smith; C. Y. Kang; S. H. Lee; J. Oh; B. Sassman; P. Majhi; P. Kirsch; H. H. Tseng; R. Jammy

Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

W. Y. Loh, P. Y. Hung, B. E. Coss, P. Kalra, Injo Ok, Greg Smith, C. Y. Kang, S. H. Lee, J. Oh, B. Sassman, P. Majhi, P. Kirsch, H. H. Tseng, R. Jammy

School of Integrated Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We have developed a novel dual phase-modulated Ni silicide for Schottky barrier and series resistance reduction in dopant-segregated source/drain (DSS) n-MOSFETs. Using pre-silicide N₂⁺ implant (thereafter N-implant), it is possible to selectively form interfacial epitaxial Si-rich NiSi₂, reducing electron Schottky barrier(SB) from 0.7eV to 0.34 eV while maintaining a low resistive bulk NiSi, at the same silicide formation temperature. Dual phase-modulated NiSi shows enhanced thermal stability up to 750°C, low ρs of 26 μΩcm and SB modulation Δφ _Bn = 0.36 eV (expected 81% reduction in contact resistance R _c). Saturation g_m for phase-modulated N-modulated DSS n-FETs shows 32% improvement over control NiSi with 22% reduction in series resistance R_ext, while still maintaining CMOS integratability.

Original language	English
Title of host publication	2009 Symposium on VLSI Technology, VLSIT 2009
Pages	100-101
Number of pages	2
Publication status	Published - 2009
Event	2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan Duration: 2009 Jun 16 → 2009 Jun 18

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2009 Symposium on VLSI Technology, VLSIT 2009
Country/Territory	Japan
City	Kyoto
Period	09/6/16 → 09/6/18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

Loh, W. Y., Hung, P. Y., Coss, B. E., Kalra, P., Ok, I., Smith, G., Kang, C. Y., Lee, S. H., Oh, J., Sassman, B., Majhi, P., Kirsch, P., Tseng, H. H., & Jammy, R. (2009). Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 100-101). [5200648] (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{127af73d2ac54790aa5a00814d22d9c5,

title = "Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs",

abstract = "We have developed a novel dual phase-modulated Ni silicide for Schottky barrier and series resistance reduction in dopant-segregated source/drain (DSS) n-MOSFETs. Using pre-silicide N2+ implant (thereafter N-implant), it is possible to selectively form interfacial epitaxial Si-rich NiSi2, reducing electron Schottky barrier(SB) from 0.7eV to 0.34 eV while maintaining a low resistive bulk NiSi, at the same silicide formation temperature. Dual phase-modulated NiSi shows enhanced thermal stability up to 750°C, low ρs of 26 μΩcm and SB modulation Δφ Bn = 0.36 eV (expected 81% reduction in contact resistance R c). Saturation gm for phase-modulated N-modulated DSS n-FETs shows 32% improvement over control NiSi with 22% reduction in series resistance Rext, while still maintaining CMOS integratability.",

author = "Loh, {W. Y.} and Hung, {P. Y.} and Coss, {B. E.} and P. Kalra and Injo Ok and Greg Smith and Kang, {C. Y.} and Lee, {S. H.} and J. Oh and B. Sassman and P. Majhi and P. Kirsch and Tseng, {H. H.} and R. Jammy",

year = "2009",

language = "English",

isbn = "9784863480094",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "100--101",

booktitle = "2009 Symposium on VLSI Technology, VLSIT 2009",

note = "2009 Symposium on VLSI Technology, VLSIT 2009 ; Conference date: 16-06-2009 Through 18-06-2009",

}

Loh, WY, Hung, PY, Coss, BE, Kalra, P, Ok, I, Smith, G, Kang, CY, Lee, SH, Oh, J, Sassman, B, Majhi, P, Kirsch, P, Tseng, HH & Jammy, R 2009, Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs. in 2009 Symposium on VLSI Technology, VLSIT 2009., 5200648, Digest of Technical Papers - Symposium on VLSI Technology, pp. 100-101, 2009 Symposium on VLSI Technology, VLSIT 2009, Kyoto, Japan, 09/6/16.

Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs. / Loh, W. Y.; Hung, P. Y.; Coss, B. E. et al.
2009 Symposium on VLSI Technology, VLSIT 2009. 2009. p. 100-101 5200648 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

AU - Loh, W. Y.

AU - Hung, P. Y.

AU - Coss, B. E.

AU - Kalra, P.

AU - Ok, Injo

AU - Smith, Greg

AU - Kang, C. Y.

AU - Lee, S. H.

AU - Oh, J.

AU - Sassman, B.

AU - Majhi, P.

AU - Kirsch, P.

AU - Tseng, H. H.

AU - Jammy, R.

PY - 2009

Y1 - 2009

N2 - We have developed a novel dual phase-modulated Ni silicide for Schottky barrier and series resistance reduction in dopant-segregated source/drain (DSS) n-MOSFETs. Using pre-silicide N2+ implant (thereafter N-implant), it is possible to selectively form interfacial epitaxial Si-rich NiSi2, reducing electron Schottky barrier(SB) from 0.7eV to 0.34 eV while maintaining a low resistive bulk NiSi, at the same silicide formation temperature. Dual phase-modulated NiSi shows enhanced thermal stability up to 750°C, low ρs of 26 μΩcm and SB modulation Δφ Bn = 0.36 eV (expected 81% reduction in contact resistance R c). Saturation gm for phase-modulated N-modulated DSS n-FETs shows 32% improvement over control NiSi with 22% reduction in series resistance Rext, while still maintaining CMOS integratability.

AB - We have developed a novel dual phase-modulated Ni silicide for Schottky barrier and series resistance reduction in dopant-segregated source/drain (DSS) n-MOSFETs. Using pre-silicide N2+ implant (thereafter N-implant), it is possible to selectively form interfacial epitaxial Si-rich NiSi2, reducing electron Schottky barrier(SB) from 0.7eV to 0.34 eV while maintaining a low resistive bulk NiSi, at the same silicide formation temperature. Dual phase-modulated NiSi shows enhanced thermal stability up to 750°C, low ρs of 26 μΩcm and SB modulation Δφ Bn = 0.36 eV (expected 81% reduction in contact resistance R c). Saturation gm for phase-modulated N-modulated DSS n-FETs shows 32% improvement over control NiSi with 22% reduction in series resistance Rext, while still maintaining CMOS integratability.

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M3 - Conference contribution

AN - SCOPUS:71049163016

SN - 9784863480094

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 100

EP - 101

BT - 2009 Symposium on VLSI Technology, VLSIT 2009

T2 - 2009 Symposium on VLSI Technology, VLSIT 2009

Y2 - 16 June 2009 through 18 June 2009

ER -

Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

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