Selective metallization of amorphous-indium-gallium-zinc-oxide thin-film transistor by using helium plasma treatment

Hun Jang, Su Jeong Lee, Yoann Porte, Jae Min Myoung

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4 Citations (Scopus)


In this study, the effects of helium (He) plasma treatment on amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been investigated. The He plasma treatment induced a dramatic decrease of the resistivity in a-IGZO thin films from 1.25 ×106 to 5.93 mΩ cm. After 5 min He plasma treatment, the a-IGZO films showed an increase in carrier concentration to 6.70 ×1019 cm-3 combined with a high hall mobility of 15.7 cm2 V-1 s-1. The conductivity improvement was linked to the formation of oxygen vacancies during the He plasma treatment, which was observed by x-ray photoelectron spectroscopy analysis. The a-IGZO films did not appear to be damaged on the surface following the plasma treatment and showed a high transmittance of about 88.3% at a wavelength of 550 nm. The He plasma-treated a-IGZO films were used as source/drain (S/D) electrodes in a-IGZO TFTs. The devices demonstrated promising characteristics, on pair with TFTs using Al electrodes, with a threshold voltage (V T) of -1.97 V, sub-threshold slope (SS) of 0.52 V/decade, saturation mobility (μ sat) of 8.75 cm2 V-1 s-1, and on/off current ratio (I on/I off) of 2.66 ×108.

Original languageEnglish
Article number035011
JournalSemiconductor Science and Technology
Issue number3
Publication statusPublished - 2018 Feb 14

Bibliographical note

Publisher Copyright:
© 2018 IOP Publishing Ltd.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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