Abstract
We here report selective epitaxial growth of GaAs layers on Si (001) substrate with V-grooved trench using the aspect ratio trapping method. The V-grooved Si surface on the bottom of Si trenches was formed through a high temperature in situ baking process in H2 atmosphere before growth of GaAs in a metal-organic chemical vapor deposition (MOCVD) chamber. The evolution of the V-grooved shape and the density of defects in selectively grown GaAs epitaxial layers are reported as a function of high temperature bake times before GaAs growth by using both high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD).
Original language | English |
---|---|
Pages (from-to) | 3242-3246 |
Number of pages | 5 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 17 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2017 |
Bibliographical note
Publisher Copyright:Copyright © 2017 American Scientific Publishers All rights reserved.
All Science Journal Classification (ASJC) codes
- Bioengineering
- General Chemistry
- Biomedical Engineering
- General Materials Science
- Condensed Matter Physics