Selective alignment of a ZnO nanowire in a magnetic field for the fabrication of an air-gap field-effect transistor

Sang Won Lee; Moon Ho Ham; Jyoti Prakash Kar; Woong Lee; Jae Min Myoung

doi:10.1016/j.mee.2009.05.008

Selective alignment of a ZnO nanowire in a magnetic field for the fabrication of an air-gap field-effect transistor

Sang Won Lee, Moon Ho Ham, Jyoti Prakash Kar, Woong Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

An air-gap field-effect transistor (FET) was prepared by selectively aligning a Ni-capped ZnO nanowire in a magnetic field on a pre-fabricated electrode patterns formed by lithography. It was demonstrated that the magnetic alignment technique could be applied effectively to the fabrication of air-gap nanowire FETs with desired circuit configurations. This device showed operational characteristic strongly dependent on the possible surface adsorbates originating from the negatively charged oxygen related species, as compared to the back-gate nanowire FET separately prepared for comparison. These results will illuminate the prospect of realizing producible matrix-type devices based on one-dimensional nanostructures such as logic circuits and biochemical sensors.

Original language	English
Pages (from-to)	10-14
Number of pages	5
Journal	Microelectronic Engineering
Volume	87
Issue number	1
DOIs	https://doi.org/10.1016/j.mee.2009.05.008
Publication status	Published - 2010 Jan

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) Grant funded by the Korea Government (MOST) (No. R01-2007-000-20143-0) and by the academic-industrial cooperation program funded by LG Display.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2009.05.008

Cite this

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abstract = "An air-gap field-effect transistor (FET) was prepared by selectively aligning a Ni-capped ZnO nanowire in a magnetic field on a pre-fabricated electrode patterns formed by lithography. It was demonstrated that the magnetic alignment technique could be applied effectively to the fabrication of air-gap nanowire FETs with desired circuit configurations. This device showed operational characteristic strongly dependent on the possible surface adsorbates originating from the negatively charged oxygen related species, as compared to the back-gate nanowire FET separately prepared for comparison. These results will illuminate the prospect of realizing producible matrix-type devices based on one-dimensional nanostructures such as logic circuits and biochemical sensors.",

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AU - Lee, Woong

AU - Myoung, Jae Min

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) Grant funded by the Korea Government (MOST) (No. R01-2007-000-20143-0) and by the academic-industrial cooperation program funded by LG Display.

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Selective alignment of a ZnO nanowire in a magnetic field for the fabrication of an air-gap field-effect transistor

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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