Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility Transistor

Sung Ho Kim; Jong Yul Park; Jiwon Chang; Kyung Rok Kim

doi:10.1109/LED.2020.3026053

Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility Transistor

Sung Ho Kim, Jong Yul Park, Jiwon Chang, Kyung Rok Kim

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We present scaling and variation predictions for a strained-silicon (s-Si) fin-based high electron mobility transistor (FinHEMT) with well-tempered, short-channel characteristics. Using device simulation calibrated with experimental data, we predict that the FinHEMT can achieve high electron mobility (1100 cm2/Vs) and enhance effective mobility (up to 2x) by suppressing the surface roughness scattering effect in the Si quantum well (QW) channel. Moreover, excellent scalability of the FinHEMT ON-current ( {I}_{{\textit {ON}}} >1.1 mA/ \mu \text{m} at {L}_{G} < 10 nm) is predicted as the high channel mobility can reduce the underlap series resistance in the scaled device. Owing to this low underlap resistivity, geometrical variations of fin width and underlap length have little effect on the ON-current in FinHEMT.

Original language	English
Article number	9204733
Pages (from-to)	1621-1624
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	11
DOIs	https://doi.org/10.1109/LED.2020.3026053
Publication status	Published - 2020 Nov

Bibliographical note

Funding Information:
Manuscript received August 18, 2020; revised September 11, 2020 and September 17, 2020; accepted September 19, 2020. Date of publication September 23, 2020; date of current version October 23, 2020. This work was supported in part by the National Research Foundation of Korea (NRF) through the Korean Government, Ministry of Education, Science and Technology (MEST) under Grant 2016M3A7B4909943, Grant 2019R1A2C2010619, and Grant 2019M3F3A1A01074453; in part by Samsung Electronics; and in part by the U.K. Brand Research Fund of the Ulsan National Institute of Science and Technology (UNIST) under Grant 1.200033.01. The review of this letter was arranged by Editor K. J. Kuhn. (Corresponding authors: Jiwon Chang; Kyung Rok Kim.) The authors are with the Department of Electrical Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea (e-mail: jiwon.chang@unist.ac.kr; krkim@unist.ac.kr).

Publisher Copyright:
© 1980-2012 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2020.3026053

Cite this

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title = "Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility Transistor",

abstract = "We present scaling and variation predictions for a strained-silicon (s-Si) fin-based high electron mobility transistor (FinHEMT) with well-tempered, short-channel characteristics. Using device simulation calibrated with experimental data, we predict that the FinHEMT can achieve high electron mobility (1100 cm2/Vs) and enhance effective mobility (up to 2x) by suppressing the surface roughness scattering effect in the Si quantum well (QW) channel. Moreover, excellent scalability of the FinHEMT ON-current ( {I}_{{\textit {ON}}} >1.1 mA/ \mu \text{m} at {L}_{G} < 10 nm) is predicted as the high channel mobility can reduce the underlap series resistance in the scaled device. Owing to this low underlap resistivity, geometrical variations of fin width and underlap length have little effect on the ON-current in FinHEMT.",

author = "Kim, {Sung Ho} and Park, {Jong Yul} and Jiwon Chang and Kim, {Kyung Rok}",

note = "Funding Information: Manuscript received August 18, 2020; revised September 11, 2020 and September 17, 2020; accepted September 19, 2020. Date of publication September 23, 2020; date of current version October 23, 2020. This work was supported in part by the National Research Foundation of Korea (NRF) through the Korean Government, Ministry of Education, Science and Technology (MEST) under Grant 2016M3A7B4909943, Grant 2019R1A2C2010619, and Grant 2019M3F3A1A01074453; in part by Samsung Electronics; and in part by the U.K. Brand Research Fund of the Ulsan National Institute of Science and Technology (UNIST) under Grant 1.200033.01. The review of this letter was arranged by Editor K. J. Kuhn. (Corresponding authors: Jiwon Chang; Kyung Rok Kim.) The authors are with the Department of Electrical Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea (e-mail: jiwon.chang@unist.ac.kr; krkim@unist.ac.kr). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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N2 - We present scaling and variation predictions for a strained-silicon (s-Si) fin-based high electron mobility transistor (FinHEMT) with well-tempered, short-channel characteristics. Using device simulation calibrated with experimental data, we predict that the FinHEMT can achieve high electron mobility (1100 cm2/Vs) and enhance effective mobility (up to 2x) by suppressing the surface roughness scattering effect in the Si quantum well (QW) channel. Moreover, excellent scalability of the FinHEMT ON-current ( {I}_{{\textit {ON}}} >1.1 mA/ \mu \text{m} at {L}_{G} < 10 nm) is predicted as the high channel mobility can reduce the underlap series resistance in the scaled device. Owing to this low underlap resistivity, geometrical variations of fin width and underlap length have little effect on the ON-current in FinHEMT.

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Scaling and Variation Predictions for Silicon Fin-Based High Electron Mobility Transistor

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