S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond

J. Y. Kim; H. J. Oh; D. S. Woo; Y. S. Lee; D. H. Kim; S. E. Kim; G. W. Ha; H. J. Kim; N. J. Kang; J. M. Park; Y. S. Hwang; D. I. Kim; B. J. Park; M. Huh; B. H. Lee; S. B. Kim; M. H. Cho; M. Y. Jung; Y. I. Kim; C. Jin; D. W. Shin; M. S. Shim; C. S. Lee; W. S. Lee; J. C. Park; G. Y. Jin; Y. J. Park; Kinam Kim

doi:10.1109/.2005.1469201

S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond

J. Y. Kim, H. J. Oh, D. S. Woo, Y. S. Lee, D. H. Kim, S. E. Kim, G. W. Ha, H. J. Kim, N. J. Kang, J. M. Park, Y. S. Hwang, D. I. Kim, B. J. Park, M. Huh, B. H. Lee, S. B. Kim, M. H. Cho, M. Y. Jung, Y. I. Kim, C. JinD. W. Shin, M. S. Shim, C. S. Lee, W. S. Lee, J. C. Park, G. Y. Jin, Y. J. Park, Kinam Kim

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

40 Citations (Scopus)

Abstract

For the first time, S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) technology has been successfully developed in a 2Gb density DRAM with 70nm feature size. It is a modified structure of the RCAT (Recess-Channel-Array Transistor) and shows an excellent scalability of recessed-channel structure to sub-50nm feature size. The S-RCAT demonstrated superior characteristics in DIBL, subthreshold swing (SW), body effect, junction leakage current and data retention time, comparing to the RCAT structure. In this paper, S-RCAT is proved to be the most promising DRAM array transistor suitable for sub-50nm and mobile applications.

Original language	English
Article number	1469201
Pages (from-to)	34-35
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2005
DOIs	https://doi.org/10.1109/.2005.1469201
Publication status	Published - 2005
Event	2005 Symposium on VLSI Technology - Kyoto, Japan Duration: 2005 Jun 14 → 2005 Jun 14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1109/.2005.1469201

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Kim, J. Y., Oh, H. J., Woo, D. S., Lee, Y. S., Kim, D. H., Kim, S. E., Ha, G. W., Kim, H. J., Kang, N. J., Park, J. M., Hwang, Y. S., Kim, D. I., Park, B. J., Huh, M., Lee, B. H., Kim, S. B., Cho, M. H., Jung, M. Y., Kim, Y. I., ... Kim, K. (2005). S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond. Digest of Technical Papers - Symposium on VLSI Technology, 2005, 34-35. Article 1469201. https://doi.org/10.1109/.2005.1469201

@article{a20351282b3247b7b07c108c73fec515,

title = "S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond",

abstract = "For the first time, S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) technology has been successfully developed in a 2Gb density DRAM with 70nm feature size. It is a modified structure of the RCAT (Recess-Channel-Array Transistor) and shows an excellent scalability of recessed-channel structure to sub-50nm feature size. The S-RCAT demonstrated superior characteristics in DIBL, subthreshold swing (SW), body effect, junction leakage current and data retention time, comparing to the RCAT structure. In this paper, S-RCAT is proved to be the most promising DRAM array transistor suitable for sub-50nm and mobile applications.",

author = "Kim, {J. Y.} and Oh, {H. J.} and Woo, {D. S.} and Lee, {Y. S.} and Kim, {D. H.} and Kim, {S. E.} and Ha, {G. W.} and Kim, {H. J.} and Kang, {N. J.} and Park, {J. M.} and Hwang, {Y. S.} and Kim, {D. I.} and Park, {B. J.} and M. Huh and Lee, {B. H.} and Kim, {S. B.} and Cho, {M. H.} and Jung, {M. Y.} and Kim, {Y. I.} and C. Jin and Shin, {D. W.} and Shim, {M. S.} and Lee, {C. S.} and Lee, {W. S.} and Park, {J. C.} and Jin, {G. Y.} and Park, {Y. J.} and Kinam Kim",

year = "2005",

doi = "10.1109/.2005.1469201",

language = "English",

volume = "2005",

pages = "34--35",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2005 Symposium on VLSI Technology ; Conference date: 14-06-2005 Through 14-06-2005",

}

Kim, JY, Oh, HJ, Woo, DS, Lee, YS, Kim, DH, Kim, SE, Ha, GW, Kim, HJ, Kang, NJ, Park, JM, Hwang, YS, Kim, DI, Park, BJ, Huh, M, Lee, BH, Kim, SB, Cho, MH, Jung, MY, Kim, YI, Jin, C, Shin, DW, Shim, MS, Lee, CS, Lee, WS, Park, JC, Jin, GY, Park, YJ & Kim, K 2005, 'S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond', Digest of Technical Papers - Symposium on VLSI Technology, vol. 2005, 1469201, pp. 34-35. https://doi.org/10.1109/.2005.1469201

TY - JOUR

T1 - S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond

AU - Kim, J. Y.

AU - Oh, H. J.

AU - Woo, D. S.

AU - Lee, Y. S.

AU - Kim, D. H.

AU - Kim, S. E.

AU - Ha, G. W.

AU - Kim, H. J.

AU - Kang, N. J.

AU - Park, J. M.

AU - Hwang, Y. S.

AU - Kim, D. I.

AU - Park, B. J.

AU - Huh, M.

AU - Lee, B. H.

AU - Kim, S. B.

AU - Cho, M. H.

AU - Jung, M. Y.

AU - Kim, Y. I.

AU - Jin, C.

AU - Shin, D. W.

AU - Shim, M. S.

AU - Lee, C. S.

AU - Lee, W. S.

AU - Park, J. C.

AU - Jin, G. Y.

AU - Park, Y. J.

AU - Kim, Kinam

PY - 2005

Y1 - 2005

N2 - For the first time, S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) technology has been successfully developed in a 2Gb density DRAM with 70nm feature size. It is a modified structure of the RCAT (Recess-Channel-Array Transistor) and shows an excellent scalability of recessed-channel structure to sub-50nm feature size. The S-RCAT demonstrated superior characteristics in DIBL, subthreshold swing (SW), body effect, junction leakage current and data retention time, comparing to the RCAT structure. In this paper, S-RCAT is proved to be the most promising DRAM array transistor suitable for sub-50nm and mobile applications.

AB - For the first time, S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) technology has been successfully developed in a 2Gb density DRAM with 70nm feature size. It is a modified structure of the RCAT (Recess-Channel-Array Transistor) and shows an excellent scalability of recessed-channel structure to sub-50nm feature size. The S-RCAT demonstrated superior characteristics in DIBL, subthreshold swing (SW), body effect, junction leakage current and data retention time, comparing to the RCAT structure. In this paper, S-RCAT is proved to be the most promising DRAM array transistor suitable for sub-50nm and mobile applications.

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U2 - 10.1109/.2005.1469201

DO - 10.1109/.2005.1469201

M3 - Conference article

AN - SCOPUS:33745146876

SN - 0743-1562

VL - 2005

SP - 34

EP - 35

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 1469201

T2 - 2005 Symposium on VLSI Technology

Y2 - 14 June 2005 through 14 June 2005

ER -

S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond

Abstract

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