S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond

J. Y. Kim, H. J. Oh, D. S. Woo, Y. S. Lee, D. H. Kim, S. E. Kim, G. W. Ha, H. J. Kim, N. J. Kang, J. M. Park, Y. S. Hwang, D. I. Kim, B. J. Park, M. Huh, B. H. Lee, S. B. Kim, M. H. Cho, M. Y. Jung, Y. I. Kim, C. JinD. W. Shin, M. S. Shim, C. S. Lee, W. S. Lee, J. C. Park, G. Y. Jin, Y. J. Park, Kinam Kim

Research output: Contribution to journalConference articlepeer-review

40 Citations (Scopus)


For the first time, S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) technology has been successfully developed in a 2Gb density DRAM with 70nm feature size. It is a modified structure of the RCAT (Recess-Channel-Array Transistor) and shows an excellent scalability of recessed-channel structure to sub-50nm feature size. The S-RCAT demonstrated superior characteristics in DIBL, subthreshold swing (SW), body effect, junction leakage current and data retention time, comparing to the RCAT structure. In this paper, S-RCAT is proved to be the most promising DRAM array transistor suitable for sub-50nm and mobile applications.

Original languageEnglish
Article number1469201
Pages (from-to)34-35
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 2005
Event2005 Symposium on VLSI Technology - Kyoto, Japan
Duration: 2005 Jun 142005 Jun 14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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