Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling

Il Yong Jang; Arun John; Frank Goodwin; Su Young Lee; Byung Gook Kim; Seong Sue Kim; Chan Uk Jeon; Jae Hyung Kim; Yong Hoon Jang

doi:10.1117/12.2069991

Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling

Il Yong Jang, Arun John, Frank Goodwin, Su Young Lee, Byung Gook Kim, Seong Sue Kim, Chan Uk Jeon, Jae Hyung Kim, Yong Hoon Jang

Department of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

Ruthenium (Ru) film used as capping layer in extreme ultraviolet (EUV) mask peeled off after annealing and in-situ UV (IUV) cleaning. We investigated Ru peeling and found out that the mechanical stress caused by the formation of Si oxide due to the penetration of oxygen atoms from ambient or cleaning media to top-Si of ML is the root cause for the problem. To support our experimental results, we developed a numerical model of finite element method (FEM) using commercial software (ABAQUS™) to calculate the stress and displacement forced on the capping layer. By using this model, we could observe that the displacement agrees well with the actual results measured from the transmission electron microscopy (TEM) image. Using the ion beam deposition (IBD) tool at SEMATECH, we developed four new types of alternative capping materials (RuA, RuB, B₄C, B₄C-buffered Ru). The durability of each new alternative capping layer observed by experiment was better than that of conventional Ru. The stress and displacement calculated from each new alternative capping layer, using modeling, also agreed well with the experimental results. A new EUV mask structure is proposed, inserting a layer of B₄C (B₄C-buffered Ru) at the interface between the capping layer (Ru) and the top-Si layer. The modeling results showed that the maximum displacement and bending stress observed from the B₄C-buffered Ru are significantly lower than that of single capping layer cases. The durability investigated from the experiment also showed that the B₄C-buffered structure is at least 3X stronger than that of conventional Ru.

Original language	English
Title of host publication	Photomask and Next-Generation Lithography Mask Technology XXI
Editors	Kokoro Kato
Publisher	SPIE
ISBN (Electronic)	9781628413236
DOIs	https://doi.org/10.1117/12.2069991
Publication status	Published - 2014
Event	Photomask and Next-Generation Lithography Mask Technology XXI - Yokohama, Japan Duration: 2014 Apr 15 → 2014 Apr 17

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9256
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Photomask and Next-Generation Lithography Mask Technology XXI
Country/Territory	Japan
City	Yokohama
Period	14/4/15 → 14/4/17

Bibliographical note

Publisher Copyright:
© 2014 SPIE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2069991

Cite this

Jang, I. Y., John, A., Goodwin, F., Lee, S. Y., Kim, B. G., Kim, S. S., Jeon, C. U., Kim, J. H., & Jang, Y. H. (2014). Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling. In K. Kato (Ed.), Photomask and Next-Generation Lithography Mask Technology XXI [92560I] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9256). SPIE. https://doi.org/10.1117/12.2069991

@inproceedings{2f98f70ad2cd4d47a406576d4c71f306,

title = "Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling",

abstract = "Ruthenium (Ru) film used as capping layer in extreme ultraviolet (EUV) mask peeled off after annealing and in-situ UV (IUV) cleaning. We investigated Ru peeling and found out that the mechanical stress caused by the formation of Si oxide due to the penetration of oxygen atoms from ambient or cleaning media to top-Si of ML is the root cause for the problem. To support our experimental results, we developed a numerical model of finite element method (FEM) using commercial software (ABAQUS{\texttrademark}) to calculate the stress and displacement forced on the capping layer. By using this model, we could observe that the displacement agrees well with the actual results measured from the transmission electron microscopy (TEM) image. Using the ion beam deposition (IBD) tool at SEMATECH, we developed four new types of alternative capping materials (RuA, RuB, B4C, B4C-buffered Ru). The durability of each new alternative capping layer observed by experiment was better than that of conventional Ru. The stress and displacement calculated from each new alternative capping layer, using modeling, also agreed well with the experimental results. A new EUV mask structure is proposed, inserting a layer of B4C (B4C-buffered Ru) at the interface between the capping layer (Ru) and the top-Si layer. The modeling results showed that the maximum displacement and bending stress observed from the B4C-buffered Ru are significantly lower than that of single capping layer cases. The durability investigated from the experiment also showed that the B4C-buffered structure is at least 3X stronger than that of conventional Ru.",

author = "Jang, {Il Yong} and Arun John and Frank Goodwin and Lee, {Su Young} and Kim, {Byung Gook} and Kim, {Seong Sue} and Jeon, {Chan Uk} and Kim, {Jae Hyung} and Jang, {Yong Hoon}",

note = "Publisher Copyright: {\textcopyright} 2014 SPIE.; Photomask and Next-Generation Lithography Mask Technology XXI ; Conference date: 15-04-2014 Through 17-04-2014",

year = "2014",

doi = "10.1117/12.2069991",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Kokoro Kato",

booktitle = "Photomask and Next-Generation Lithography Mask Technology XXI",

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}

Jang, IY, John, A, Goodwin, F, Lee, SY, Kim, BG, Kim, SS, Jeon, CU, Kim, JH & Jang, YH 2014, Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling. in K Kato (ed.), Photomask and Next-Generation Lithography Mask Technology XXI., 92560I, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9256, SPIE, Photomask and Next-Generation Lithography Mask Technology XXI, Yokohama, Japan, 14/4/15. https://doi.org/10.1117/12.2069991

Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling. / Jang, Il Yong; John, Arun; Goodwin, Frank et al.
Photomask and Next-Generation Lithography Mask Technology XXI. ed. / Kokoro Kato. SPIE, 2014. 92560I (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9256).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling

AU - Jang, Il Yong

AU - John, Arun

AU - Goodwin, Frank

AU - Lee, Su Young

AU - Kim, Byung Gook

AU - Kim, Seong Sue

AU - Jeon, Chan Uk

AU - Kim, Jae Hyung

AU - Jang, Yong Hoon

PY - 2014

Y1 - 2014

N2 - Ruthenium (Ru) film used as capping layer in extreme ultraviolet (EUV) mask peeled off after annealing and in-situ UV (IUV) cleaning. We investigated Ru peeling and found out that the mechanical stress caused by the formation of Si oxide due to the penetration of oxygen atoms from ambient or cleaning media to top-Si of ML is the root cause for the problem. To support our experimental results, we developed a numerical model of finite element method (FEM) using commercial software (ABAQUS™) to calculate the stress and displacement forced on the capping layer. By using this model, we could observe that the displacement agrees well with the actual results measured from the transmission electron microscopy (TEM) image. Using the ion beam deposition (IBD) tool at SEMATECH, we developed four new types of alternative capping materials (RuA, RuB, B4C, B4C-buffered Ru). The durability of each new alternative capping layer observed by experiment was better than that of conventional Ru. The stress and displacement calculated from each new alternative capping layer, using modeling, also agreed well with the experimental results. A new EUV mask structure is proposed, inserting a layer of B4C (B4C-buffered Ru) at the interface between the capping layer (Ru) and the top-Si layer. The modeling results showed that the maximum displacement and bending stress observed from the B4C-buffered Ru are significantly lower than that of single capping layer cases. The durability investigated from the experiment also showed that the B4C-buffered structure is at least 3X stronger than that of conventional Ru.

AB - Ruthenium (Ru) film used as capping layer in extreme ultraviolet (EUV) mask peeled off after annealing and in-situ UV (IUV) cleaning. We investigated Ru peeling and found out that the mechanical stress caused by the formation of Si oxide due to the penetration of oxygen atoms from ambient or cleaning media to top-Si of ML is the root cause for the problem. To support our experimental results, we developed a numerical model of finite element method (FEM) using commercial software (ABAQUS™) to calculate the stress and displacement forced on the capping layer. By using this model, we could observe that the displacement agrees well with the actual results measured from the transmission electron microscopy (TEM) image. Using the ion beam deposition (IBD) tool at SEMATECH, we developed four new types of alternative capping materials (RuA, RuB, B4C, B4C-buffered Ru). The durability of each new alternative capping layer observed by experiment was better than that of conventional Ru. The stress and displacement calculated from each new alternative capping layer, using modeling, also agreed well with the experimental results. A new EUV mask structure is proposed, inserting a layer of B4C (B4C-buffered Ru) at the interface between the capping layer (Ru) and the top-Si layer. The modeling results showed that the maximum displacement and bending stress observed from the B4C-buffered Ru are significantly lower than that of single capping layer cases. The durability investigated from the experiment also showed that the B4C-buffered structure is at least 3X stronger than that of conventional Ru.

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

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PB - SPIE

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ER -

Jang IY, John A, Goodwin F, Lee SY, Kim BG, Kim SS et al. Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling. In Kato K, editor, Photomask and Next-Generation Lithography Mask Technology XXI. SPIE. 2014. 92560I. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2069991

Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling

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