Rubrene polycrystalline transistor channel achieved through in situ vacuum annealing

Se W. Park, S. H. Jeong, Jeong M. Choi, Jung Min Hwang, Jae Hoon Kim, Seongil Im

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


The authors report on the rubrene polycrystalline film growth for its thin film transistor (TFT) applications. Amorphous rubrene thin film was initially obtained on 200-nm -thick Si O2 Si substrate at 40 °C in a vacuum chamber by thermal evaporation but in situ long time postannealing at the elevated temperatures of 60-80 °C transformed the amorphous phase into crystalline. Based on an optimum condition to cover the whole channel area with polycrystalline film, the authors have fabricated a rubrene TFT with a relatively high field effect mobility of 0.002 cm2 V s, an on/off ratio of ∼ 104, and a low threshold voltage of -9 V.

Original languageEnglish
Article number033506
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2007

Bibliographical note

Funding Information:
This research was performed with the financial support from KOSEF (Program No. M1-0214-00-0228) and support from Brain Korea 21 Project.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Rubrene polycrystalline transistor channel achieved through in situ vacuum annealing'. Together they form a unique fingerprint.

Cite this