Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts

Hyun Kum; Junseok Heo; Shafat Jahangir; Animesh Banerjee; Wei Guo; Pallab Bhattacharya

doi:10.1063/1.4711850

Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts

Hyun Kum, Junseok Heo, Shafat Jahangir, Animesh Banerjee, Wei Guo, Pallab Bhattacharya

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

We report the direct measurement of spin transport characteristics in a GaN spin valve, with a relatively defect-free single GaN nanowire (NW) as the channel and FeCo/MgO as the tunnel barrier spin contact. Hanle spin precession and non-local transport measurements are made in an unintentionally doped nanowire spin valves. Spin diffusion length and spin lifetime values of 260 nm and 100 ps, respectively, are derived. Appropriate control measurements have been made to verify spin injection, transport, and detection.

Original language	English
Article number	182407
Journal	Applied Physics Letters
Volume	100
Issue number	18
DOIs	https://doi.org/10.1063/1.4711850
Publication status	Published - 2012 Apr 30

Bibliographical note

Funding Information:
The work is supported by the National Science Foundation (MRSEC program) under Grant 0968346.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4711850

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@article{84034880eb974df695ce88b1079b0e52,

title = "Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts",

abstract = "We report the direct measurement of spin transport characteristics in a GaN spin valve, with a relatively defect-free single GaN nanowire (NW) as the channel and FeCo/MgO as the tunnel barrier spin contact. Hanle spin precession and non-local transport measurements are made in an unintentionally doped nanowire spin valves. Spin diffusion length and spin lifetime values of 260 nm and 100 ps, respectively, are derived. Appropriate control measurements have been made to verify spin injection, transport, and detection.",

author = "Hyun Kum and Junseok Heo and Shafat Jahangir and Animesh Banerjee and Wei Guo and Pallab Bhattacharya",

note = "Funding Information: The work is supported by the National Science Foundation (MRSEC program) under Grant 0968346.",

year = "2012",

month = apr,

day = "30",

doi = "10.1063/1.4711850",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts

AU - Kum, Hyun

AU - Heo, Junseok

AU - Jahangir, Shafat

AU - Banerjee, Animesh

AU - Guo, Wei

AU - Bhattacharya, Pallab

N1 - Funding Information: The work is supported by the National Science Foundation (MRSEC program) under Grant 0968346.

PY - 2012/4/30

Y1 - 2012/4/30

N2 - We report the direct measurement of spin transport characteristics in a GaN spin valve, with a relatively defect-free single GaN nanowire (NW) as the channel and FeCo/MgO as the tunnel barrier spin contact. Hanle spin precession and non-local transport measurements are made in an unintentionally doped nanowire spin valves. Spin diffusion length and spin lifetime values of 260 nm and 100 ps, respectively, are derived. Appropriate control measurements have been made to verify spin injection, transport, and detection.

AB - We report the direct measurement of spin transport characteristics in a GaN spin valve, with a relatively defect-free single GaN nanowire (NW) as the channel and FeCo/MgO as the tunnel barrier spin contact. Hanle spin precession and non-local transport measurements are made in an unintentionally doped nanowire spin valves. Spin diffusion length and spin lifetime values of 260 nm and 100 ps, respectively, are derived. Appropriate control measurements have been made to verify spin injection, transport, and detection.

UR - http://www.scopus.com/inward/record.url?scp=84862519806&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862519806&partnerID=8YFLogxK

U2 - 10.1063/1.4711850

DO - 10.1063/1.4711850

M3 - Article

AN - SCOPUS:84862519806

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 182407

ER -

Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts

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