We report the synthesis of carbon nanotubes (CNT) by localized resistive heating of a MEMS structure in a room temperature chamber. This is the first known vapor-deposition CNT growth method that does not require globally elevated temperatures. The localized, selective, and scalable process is compatible with on-chip microelectronics and removes necessity of post-synthesis assembly of nanostructures to form integrated devices. Synthesized nanotube dimensions are 5-50 nm in diameter and up to 7 μm in length. Growth rates of up to 0.25 μm/min were observed. This accomplishment makes possible the direct integration of CNT devices with on-chip transduction, readout, processing, and communications circuitry, facilitating integration of nanotechnology with larger-scale systems.
|Title of host publication||2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings|
|Publisher||IEEE Computer Society|
|Number of pages||4|
|Publication status||Published - 2003|
|Event||2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - San Francisco, United States|
Duration: 2003 Aug 12 → 2003 Aug 14
|Name||Proceedings of the IEEE Conference on Nanotechnology|
|Other||2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003|
|Period||03/8/12 → 03/8/14|
Bibliographical notePublisher Copyright:
© 2003 IEEE.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Materials Chemistry
- Condensed Matter Physics