We discuss that the effects of Ga flux and growth temperature on ferromagnetic properties of (Ga,Mn)N films grown on sapphire substrate by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N thin films exhibited ferromagnetic ordering at room temperature without any secondary phases verified by X-ray diffraction. It is found that the magnetic properties of the films are improved with decreasing Ga flux. It is also observed that saturation magnetization increases with decreasing the (Ga,Mn)N film growth temperature.
Bibliographical noteFunding Information:
This work was supported by the Korea Basic Science Institute Grant and Yonsei University Research Board. The authors thank W.Y. Lee for assistance with the alternating gradient magnetometer.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry