Room temperature ferroelectric property of BiMnO3 thin film with double SrTiO3 buffer layers on Pt/Ti/SiO2/Si substrate

J. Y. Son; C. S. Park; Hyungjun Kim

doi:10.1007/s12540-010-0419-7

Room temperature ferroelectric property of BiMnO₃ thin film with double SrTiO₃ buffer layers on Pt/Ti/SiO₂/Si substrate

J. Y. Son, C. S. Park, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We fabricated high quality BiMnO₃ thin films with double SrTiO₃ buffer layers on Pt/Ti/SiO₂/Si substrates, in which the SrTiO₃ buffer layers were used for the reduction of leakage current in BiMnO₃ thin films. We chose an SrTiO₃ thickness of about 5 nm, which was obtained by the fitting of ellipsometer data. We confirmed a remarkable enhancement in leakage current. BiMnO₃ thin films exhibited a ferromagnetic transition with Curie temperature of about 105 K. The BiMnO₃ thin film also showed a good ferroelectric property with a remnant polarization of about 9 μC/cm².

Original language	English
Pages (from-to)	289-292
Number of pages	4
Journal	Metals and Materials International
Volume	16
Issue number	2
DOIs	https://doi.org/10.1007/s12540-010-0419-7
Publication status	Published - 2010 Apr

Bibliographical note

Funding Information:
This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2009-0083749), and Nano R&D Program through the NRF funded by the Ministry of Education, Science and Technology (No. 2009-0082853)

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Mechanics of Materials
Metals and Alloys
Materials Chemistry

Access to Document

10.1007/s12540-010-0419-7

Cite this

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title = "Room temperature ferroelectric property of BiMnO3 thin film with double SrTiO3 buffer layers on Pt/Ti/SiO2/Si substrate",

abstract = "We fabricated high quality BiMnO3 thin films with double SrTiO3 buffer layers on Pt/Ti/SiO2/Si substrates, in which the SrTiO3 buffer layers were used for the reduction of leakage current in BiMnO3 thin films. We chose an SrTiO3 thickness of about 5 nm, which was obtained by the fitting of ellipsometer data. We confirmed a remarkable enhancement in leakage current. BiMnO3 thin films exhibited a ferromagnetic transition with Curie temperature of about 105 K. The BiMnO3 thin film also showed a good ferroelectric property with a remnant polarization of about 9 μC/cm2.",

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note = "Funding Information: This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2009-0083749), and Nano R&D Program through the NRF funded by the Ministry of Education, Science and Technology (No. 2009-0082853)",

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AU - Son, J. Y.

AU - Park, C. S.

AU - Kim, Hyungjun

N1 - Funding Information: This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2009-0083749), and Nano R&D Program through the NRF funded by the Ministry of Education, Science and Technology (No. 2009-0082853)

PY - 2010/4

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AB - We fabricated high quality BiMnO3 thin films with double SrTiO3 buffer layers on Pt/Ti/SiO2/Si substrates, in which the SrTiO3 buffer layers were used for the reduction of leakage current in BiMnO3 thin films. We chose an SrTiO3 thickness of about 5 nm, which was obtained by the fitting of ellipsometer data. We confirmed a remarkable enhancement in leakage current. BiMnO3 thin films exhibited a ferromagnetic transition with Curie temperature of about 105 K. The BiMnO3 thin film also showed a good ferroelectric property with a remnant polarization of about 9 μC/cm2.

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