Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor: (Ga,Mn)N

Kwang Soo Huh; Moon Ho Ham; Jae Min Myoung; Jeung Mi Lee; Kyoung Il Lee; Joon Yeon Chang; Suk Hee Han; Hi Jung Kim; Woo Young Lee

doi:10.1143/jjap.41.l1069

Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor: (Ga,Mn)N

Kwang Soo Huh, Moon Ho Ham, Jae Min Myoung, Jeung Mi Lee, Kyoung Il Lee, Joon Yeon Chang, Suk Hee Han, Hi Jung Kim, Woo Young Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We present the electron-induced ferromagnetic ordering and magnetotransport of epitaxial (Ga_1-x Mn_x)N films with low Mn concentration (x = 0.0006-0.005) grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700 K, in-plane magnetic anisotropy, and negative magnetoresistance (MR) in the range of 4-300 K. Our results are indicative of ferromagnetic semiconducting (Ga,Mn)N films due to the coupling of electron spins and localized Mn moments.

Original language	English
Pages (from-to)	L1069-L1071
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	10 A
DOIs	https://doi.org/10.1143/jjap.41.l1069
Publication status	Published - 2002 Oct 1

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor: (Ga,Mn)N",

abstract = "We present the electron-induced ferromagnetic ordering and magnetotransport of epitaxial (Ga1-x Mnx)N films with low Mn concentration (x = 0.0006-0.005) grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700 K, in-plane magnetic anisotropy, and negative magnetoresistance (MR) in the range of 4-300 K. Our results are indicative of ferromagnetic semiconducting (Ga,Mn)N films due to the coupling of electron spins and localized Mn moments.",

author = "Huh, {Kwang Soo} and Ham, {Moon Ho} and Myoung, {Jae Min} and Lee, {Jeung Mi} and Lee, {Kyoung Il} and Chang, {Joon Yeon} and Han, {Suk Hee} and Kim, {Hi Jung} and Lee, {Woo Young}",

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doi = "10.1143/jjap.41.l1069",

language = "English",

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TY - JOUR

T1 - Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor

T2 - (Ga,Mn)N

AU - Huh, Kwang Soo

AU - Ham, Moon Ho

AU - Myoung, Jae Min

AU - Lee, Jeung Mi

AU - Lee, Kyoung Il

AU - Chang, Joon Yeon

AU - Han, Suk Hee

AU - Kim, Hi Jung

AU - Lee, Woo Young

PY - 2002/10/1

Y1 - 2002/10/1

N2 - We present the electron-induced ferromagnetic ordering and magnetotransport of epitaxial (Ga1-x Mnx)N films with low Mn concentration (x = 0.0006-0.005) grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700 K, in-plane magnetic anisotropy, and negative magnetoresistance (MR) in the range of 4-300 K. Our results are indicative of ferromagnetic semiconducting (Ga,Mn)N films due to the coupling of electron spins and localized Mn moments.

AB - We present the electron-induced ferromagnetic ordering and magnetotransport of epitaxial (Ga1-x Mnx)N films with low Mn concentration (x = 0.0006-0.005) grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700 K, in-plane magnetic anisotropy, and negative magnetoresistance (MR) in the range of 4-300 K. Our results are indicative of ferromagnetic semiconducting (Ga,Mn)N films due to the coupling of electron spins and localized Mn moments.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10 A

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Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor: (Ga,Mn)N

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