Role of manganese in ferromagnetic (Al,Mn)N films

Moon Ho Ham; Sukho Yoon; Yongjo Park; Jae Min Myoung

doi:10.1016/j.ssc.2005.10.021

Role of manganese in ferromagnetic (Al,Mn)N films

Moon Ho Ham, Sukho Yoon, Yongjo Park, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have studied the (Al,Mn)N films grown by plasma-enhanced molecular beam epitaxy via Raman spectroscopy to verify how Mn atoms were incorporated into AlN lattice. In Raman spectra of (Al,Mn)N, the frequency of E₂ (high) mode blueshifts. Together with XRD results, the strain calculations support the existence of the substitutional dopant. Also, an additional peak, attributed to local vibrational mode of Mn, coincides with the calculated phonon frequency on the basis of a simple model. The Raman results reveal that Mn atoms replace Al atoms at the substitutional sites in the lattice. The (Al,Mn)N films were found to exhibit insulating characteristics and ferromagnetic ordering above room temperature. These results suggest that the ferromagnetism in the (Al,Mn)N films is due to the intrinsic nature originating from the substitutional Mn within (Al,Mn)N.

Original language	English
Pages (from-to)	11-15
Number of pages	5
Journal	Solid State Communications
Volume	137
Issue number	1-2
DOIs	https://doi.org/10.1016/j.ssc.2005.10.021
Publication status	Published - 2006 Jan

Bibliographical note

Funding Information:
This work was supported by Samsung Advanced Institute of Technology (Grant No. 2003-2-0799). The authors thank S.J. Oh at Korea Basic Science Institute for his assistance with SQUID magnetometer.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/j.ssc.2005.10.021

Cite this

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title = "Role of manganese in ferromagnetic (Al,Mn)N films",

abstract = "We have studied the (Al,Mn)N films grown by plasma-enhanced molecular beam epitaxy via Raman spectroscopy to verify how Mn atoms were incorporated into AlN lattice. In Raman spectra of (Al,Mn)N, the frequency of E2 (high) mode blueshifts. Together with XRD results, the strain calculations support the existence of the substitutional dopant. Also, an additional peak, attributed to local vibrational mode of Mn, coincides with the calculated phonon frequency on the basis of a simple model. The Raman results reveal that Mn atoms replace Al atoms at the substitutional sites in the lattice. The (Al,Mn)N films were found to exhibit insulating characteristics and ferromagnetic ordering above room temperature. These results suggest that the ferromagnetism in the (Al,Mn)N films is due to the intrinsic nature originating from the substitutional Mn within (Al,Mn)N.",

author = "Ham, {Moon Ho} and Sukho Yoon and Yongjo Park and Myoung, {Jae Min}",

note = "Funding Information: This work was supported by Samsung Advanced Institute of Technology (Grant No. 2003-2-0799). The authors thank S.J. Oh at Korea Basic Science Institute for his assistance with SQUID magnetometer.",

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doi = "10.1016/j.ssc.2005.10.021",

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T1 - Role of manganese in ferromagnetic (Al,Mn)N films

AU - Ham, Moon Ho

AU - Yoon, Sukho

AU - Park, Yongjo

AU - Myoung, Jae Min

N1 - Funding Information: This work was supported by Samsung Advanced Institute of Technology (Grant No. 2003-2-0799). The authors thank S.J. Oh at Korea Basic Science Institute for his assistance with SQUID magnetometer.

PY - 2006/1

Y1 - 2006/1

N2 - We have studied the (Al,Mn)N films grown by plasma-enhanced molecular beam epitaxy via Raman spectroscopy to verify how Mn atoms were incorporated into AlN lattice. In Raman spectra of (Al,Mn)N, the frequency of E2 (high) mode blueshifts. Together with XRD results, the strain calculations support the existence of the substitutional dopant. Also, an additional peak, attributed to local vibrational mode of Mn, coincides with the calculated phonon frequency on the basis of a simple model. The Raman results reveal that Mn atoms replace Al atoms at the substitutional sites in the lattice. The (Al,Mn)N films were found to exhibit insulating characteristics and ferromagnetic ordering above room temperature. These results suggest that the ferromagnetism in the (Al,Mn)N films is due to the intrinsic nature originating from the substitutional Mn within (Al,Mn)N.

AB - We have studied the (Al,Mn)N films grown by plasma-enhanced molecular beam epitaxy via Raman spectroscopy to verify how Mn atoms were incorporated into AlN lattice. In Raman spectra of (Al,Mn)N, the frequency of E2 (high) mode blueshifts. Together with XRD results, the strain calculations support the existence of the substitutional dopant. Also, an additional peak, attributed to local vibrational mode of Mn, coincides with the calculated phonon frequency on the basis of a simple model. The Raman results reveal that Mn atoms replace Al atoms at the substitutional sites in the lattice. The (Al,Mn)N films were found to exhibit insulating characteristics and ferromagnetic ordering above room temperature. These results suggest that the ferromagnetism in the (Al,Mn)N films is due to the intrinsic nature originating from the substitutional Mn within (Al,Mn)N.

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Role of manganese in ferromagnetic (Al,Mn)N films

Abstract

Bibliographical note

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