Role of an Interfacial Layer in Ta2O5-Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation

Dong Kyu Lee; Gun Hwan Kim; Hyunchul Sohn; Min Kyu Yang

doi:10.1002/pssr.201900646

Role of an Interfacial Layer in Ta₂O₅-Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation

Dong Kyu Lee, Gun Hwan Kim, Hyunchul Sohn, Min Kyu Yang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A comparative study of two electrode materials is conducted to demonstrate the effect of the electrode material on the resistive switching (RS) behavior of Ta₂O₅-based devices. Compared with a Pt top electrode (TE), application of a TiN TE shows an improved endurance of up to 10⁹ cycles and a highly reliable 4 bit (16 states) operation. Various structural analyses reveal that this distinctive RS performance originates from an oxygen-deficient layer (TaO_x) between the Ta₂O₅ and TiN TEs. This interfacial layer improves the endurance of the device by acting as an oxygen reservoir that prevents the severe consumption of oxygen during repetitive RS and makes the device compatible with electrical pulse–based operations for stable multibit operation by acting as an appropriate load resistor. The results herein suggest that the optimized interfacial layer is essential for the development of high-performance RS devices for future nonvolatile memory applications.

Original language	English
Article number	1900646
Journal	Physica Status Solidi - Rapid Research Letters
Volume	14
Issue number	3
DOIs	https://doi.org/10.1002/pssr.201900646
Publication status	Published - 2020 Mar 1

Bibliographical note

Funding Information:
D.K.L. and G.H.K. contributed equally to this work. This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Science and ICT (MSIT; grant no. NRF‐2019R1F1A1060272).

Funding Information:
D.K.L. and G.H.K. contributed equally to this work. This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Science and ICT (MSIT; grant no. NRF-2019R1F1A1060272).

Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

Access to Document

10.1002/pssr.201900646

Cite this

@article{0c943345f8b844b38d0951d521e8cc1b,

title = "Role of an Interfacial Layer in Ta2O5-Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation",

abstract = "A comparative study of two electrode materials is conducted to demonstrate the effect of the electrode material on the resistive switching (RS) behavior of Ta2O5-based devices. Compared with a Pt top electrode (TE), application of a TiN TE shows an improved endurance of up to 109 cycles and a highly reliable 4 bit (16 states) operation. Various structural analyses reveal that this distinctive RS performance originates from an oxygen-deficient layer (TaOx) between the Ta2O5 and TiN TEs. This interfacial layer improves the endurance of the device by acting as an oxygen reservoir that prevents the severe consumption of oxygen during repetitive RS and makes the device compatible with electrical pulse–based operations for stable multibit operation by acting as an appropriate load resistor. The results herein suggest that the optimized interfacial layer is essential for the development of high-performance RS devices for future nonvolatile memory applications.",

author = "Lee, {Dong Kyu} and Kim, {Gun Hwan} and Hyunchul Sohn and Yang, {Min Kyu}",

note = "Funding Information: D.K.L. and G.H.K. contributed equally to this work. This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Science and ICT (MSIT; grant no. NRF‐2019R1F1A1060272). Funding Information: D.K.L. and G.H.K. contributed equally to this work. This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Science and ICT (MSIT; grant no. NRF-2019R1F1A1060272). Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2020",

month = mar,

day = "1",

doi = "10.1002/pssr.201900646",

language = "English",

volume = "14",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "3",

}

TY - JOUR

T1 - Role of an Interfacial Layer in Ta2O5-Based Resistive Switching Devices for Improved Endurance and Reliable Multibit Operation

AU - Lee, Dong Kyu

AU - Kim, Gun Hwan

AU - Sohn, Hyunchul

AU - Yang, Min Kyu

N1 - Funding Information: D.K.L. and G.H.K. contributed equally to this work. This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Science and ICT (MSIT; grant no. NRF‐2019R1F1A1060272). Funding Information: D.K.L. and G.H.K. contributed equally to this work. This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Science and ICT (MSIT; grant no. NRF-2019R1F1A1060272). Publisher Copyright: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2020/3/1

Y1 - 2020/3/1

N2 - A comparative study of two electrode materials is conducted to demonstrate the effect of the electrode material on the resistive switching (RS) behavior of Ta2O5-based devices. Compared with a Pt top electrode (TE), application of a TiN TE shows an improved endurance of up to 109 cycles and a highly reliable 4 bit (16 states) operation. Various structural analyses reveal that this distinctive RS performance originates from an oxygen-deficient layer (TaOx) between the Ta2O5 and TiN TEs. This interfacial layer improves the endurance of the device by acting as an oxygen reservoir that prevents the severe consumption of oxygen during repetitive RS and makes the device compatible with electrical pulse–based operations for stable multibit operation by acting as an appropriate load resistor. The results herein suggest that the optimized interfacial layer is essential for the development of high-performance RS devices for future nonvolatile memory applications.

AB - A comparative study of two electrode materials is conducted to demonstrate the effect of the electrode material on the resistive switching (RS) behavior of Ta2O5-based devices. Compared with a Pt top electrode (TE), application of a TiN TE shows an improved endurance of up to 109 cycles and a highly reliable 4 bit (16 states) operation. Various structural analyses reveal that this distinctive RS performance originates from an oxygen-deficient layer (TaOx) between the Ta2O5 and TiN TEs. This interfacial layer improves the endurance of the device by acting as an oxygen reservoir that prevents the severe consumption of oxygen during repetitive RS and makes the device compatible with electrical pulse–based operations for stable multibit operation by acting as an appropriate load resistor. The results herein suggest that the optimized interfacial layer is essential for the development of high-performance RS devices for future nonvolatile memory applications.

UR - http://www.scopus.com/inward/record.url?scp=85077082817&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85077082817&partnerID=8YFLogxK

U2 - 10.1002/pssr.201900646

DO - 10.1002/pssr.201900646

M3 - Article

AN - SCOPUS:85077082817

SN - 1862-6254

VL - 14

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 3

M1 - 1900646

ER -