TY - JOUR
T1 - Role of alkaline-earth metal in solution-processed indium oxide based thin-film transistors
AU - Park, Jee Ho
AU - Yoo, Young Bum
AU - Lee, Keun Ho
AU - Jang, Woo Soon
AU - Oh, Jin Young
AU - Chae, Soo Sang
AU - Choi, Won Jin
AU - Baik, Hong Koo
PY - 2012/11
Y1 - 2012/11
N2 - We fabricated alkaline-earth metal doped indium oxide thin-film transistors (TFTs) using a solution process. To analyze the effects of Mg, Ca, and Sr on the solution-processed indium oxide TFTs, thermogravimetric analysis, X-ray diffraction, atomic force microscopy analysis, and X-ray photoelectron spectroscopy were performed. The main difference in electrical performance results from the dehydroxylation energy of alkalineearth metal, each ion radius and optical band gap. The optimized Mg-, Ca-, and Sr-doped indium oxide TFTs show mobilities of 2.03, 1.64, and 1.08 cm2 V-1 s -1, respectively, and an on-off current ratio of about ̃10 5.
AB - We fabricated alkaline-earth metal doped indium oxide thin-film transistors (TFTs) using a solution process. To analyze the effects of Mg, Ca, and Sr on the solution-processed indium oxide TFTs, thermogravimetric analysis, X-ray diffraction, atomic force microscopy analysis, and X-ray photoelectron spectroscopy were performed. The main difference in electrical performance results from the dehydroxylation energy of alkalineearth metal, each ion radius and optical band gap. The optimized Mg-, Ca-, and Sr-doped indium oxide TFTs show mobilities of 2.03, 1.64, and 1.08 cm2 V-1 s -1, respectively, and an on-off current ratio of about ̃10 5.
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U2 - 10.1143/APEX.5.111101
DO - 10.1143/APEX.5.111101
M3 - Article
AN - SCOPUS:84869200641
SN - 1882-0778
VL - 5
JO - Applied Physics Express
JF - Applied Physics Express
IS - 11
M1 - 111101
ER -